V = 4000V Very High Voltage IXEL40N400 CES I = 40A IGBT C110 V 3.2V CE(sat) t = 425ns fi(typ) ( Electrically Isolated Tab) TM ISOPLUS i5-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4000 V CES J G V Continuous 20 V GES E Isolated Tab C V Transient 30 V GEM I T = 25C 90 A C25 C I T = 110C 40 A G = Gate C = Collector C110 C E = Emitter I Pulse Width Limited by T , 1ms, V = 25V 400 A CM JM GE P T = 25C 380 W C C T - 40 ... +150 C J Features T 150 C JM Silicon Chip on Direct-Copper Bond T - 40 ... +150 C stg (DCB) Substrate T Maximum Lead Temperature for Soldering 300 C L Isolated Mounting Surface T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD 4000V~ Electrical Isolation V I < 1mA, 50/60 Hz, t = 1 minute 4000 V~ ISOL ISOL UL Recognized Package High Peak Current Capability F Mounting Force 30..170 / 7..36 Nm/lb-in. C Low Saturation Voltage Weight 8g Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10mA, V = V 5.5 7.0 V GE(th) C CE GE Applications I V = V , V = 0V 100 A CES CE CES GE Note 2, T = 125C 1.5 mA J Capacitor Discharge I V = 0V, V = 20V 500 nA GES CE GE Pulser Circuits V I = I , V = 15V, Note 1 2.4 3.2 V CE(sat) C C110 GE T = 125C 3.0 V J 2012 IXYS CORPORATION, All Rights Reserved DS99385B(09/12)IXEL40N400 Symbol Test Conditions Characteristic Values TM ISOPLUS i5-Pak HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J E S g I = I , V = 10V, Note 1 14 24 S fs C C110 CE I I = I , V = 3400V, V < 4000V 200 A SC C C110 CC CM V = 15V, t < 10 s 4 GE SC + 1 2 3 C 6040 pF ies C V = 25V, V = 0V, f = 1MHz 278 pF oes CE GE C 120 pF res c b1 e1e1 b3b2 A1 R 5.2 e Gint Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Q 275 nC g(on) Tab 4 = Isolated SYM INCHES MILLIMETER Q I = I , V = 15V, V = 1000 V 63 nC ge C C110 GE CE MIN MAX MIN MAX Q 134 nC gc A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 t 160 ns d(on) Inductive load, T = 25C A2 0.046 0.055 1.17 1.40 J t 100 ns ri b 0.045 0.055 1.14 1.40 E I = I , V = 15V 55 mJ on C C110 GE b1 0.063 0.072 1.60 1.83 t 630 ns b2 0.058 0.068 1.47 1.73 d(off) V = 2800V, R = 33 CE G c 0.020 0.029 0.51 0.74 t 425 ns fi D 1.020 1.040 25.91 26.42 Note 3 E 165 mJ off E 0.770 0.799 19.56 20.29 e 0.150 BSC 3.81 BSC t 155 ns d(on) e1 0.450 BSC 11.43 BSC Inductive load, T = 125C J t 105 ns L 0.780 0.820 19.81 20.83 ri L1 0.080 0.102 2.03 2.59 E I = I , V = 15V 85 mJ on C C110 GE Q 0.210 0.235 5.33 5.97 t 715 ns d(off) V = 2800V, R = 33 Q1 0.490 0.513 12.45 13.03 CE G t 455 ns fi R 0.150 0.180 3.81 4.57 Note 3 E 205 mJ R1 0.100 0.130 2.54 3.30 off S 0.668 0.690 16.97 17.53 R 0.26 C/W thJC T 0.801 0.821 20.34 20.85 R (Pressure Mount) 0.15 C/W thCK U 0.065 0.080 1.65 2.03 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I measurement. CES 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537