TM V = 300 V IXFN 102N30P PolarHV HiPerFET DSS I = 86 A D25 Power MOSFET R 33 m DS(on) N-Channel Enhancement Mode t 200 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C 300 V DSS J S V T = 25C to 150C R = 1 M 300 V DGR J GS G V Continuous 20 V GS V Transient 30 V GSM I T = 25C86A D25 C S I Lead Current Limit, RMS 100 A L D I T = 25C, pulse width limited by T 250 A DM C JM I T = 25C88A AR C G = Gate D = Drain E T = 25C60mJ S = Source AR C E T = 25C5J AS C Either Source terminal S can be used as the dv/dt I I , di/dt 100 A/s, V V , 10 V/ns Source terminal or the Kelvin Source (gate S DM DD DSS return) terminal. T 150C, R = 4 J G P T = 25C 570 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T 1.6 mm (0.062 in.) from case for 10 s 300 C z L International standard package z Encapsulating epoxy meets V 50/60 Hz, RMS t = 1 min 2500 V~ UL 94 V-0, flammability classification ISOL z I 1 mA t = 1 s 3000 V~ miniBLOC with Aluminium nitride ISOL isolation M Mounting torque 1.5 / 13 Nm/lb.in. z d Fast recovery diode Terminal connection torque 1.5 / 13 Nm/lb.in. z Unclamped Inductive Switching (UIS) rated Weight 30 g z Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J Advantages BV V = 0 V, I = 250 A 300 V DSS GS D z Easy to mount z V V = V , I = 4 mA 2.5 5.0 V Space savings GS(th) DS GS D z High power density I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125C 250 A GS J R V = 10 V, I = 0.5 I Note 1 33 m DS(on) GS D D25, DS99248E(06/06) 2006 IXYS All rights reservedIXFN102N30P Symbol Test Conditions Characteristic Values SOT-227B Outline (T = 25C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , Note 1 45 57 S fs DS D D25 C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 230 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 28 ns r GS DS DSS D t R = 3.3 (External) 130 ns d(off) G t 30 ns f Q 224 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 110 nC gd R 0.22 C/W thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 102 A S GS I Repetitive 250 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 0.8 C RM R GS I 6A RM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2