TM TM Polar3 HiPerFET V = 600V IXFN110N60P3 DSS Power MOSFET I = 90A D25 R 56m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 90 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 275 A S = Source DM C JM I T = 25 C 55 A A C Either Source Terminal S can be used as E T = 25 C3J the Source Terminal or the Kelvin Source AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J P T = 25 C 1500 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package miniBLOC with Aluminum Nitride V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Isolation I 1mA, t = 1s 3000 V~ ISOL Avalanche Rated M Mounting Torque for Base Plate 1.5/13 Nm/lb.in Low Package Inductance d Terminal Connection Torque 1.3/11.5 Nm/lb.in Fast Intrinsic Rectifier Low R and Q Weight 30 g DS(on) G Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J DC-DC Converters BV V = 0V, I = 3mA 600 V DSS GS D Battery Chargers V V = V , I = 8mA 3.0 5.0 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 200 nA GSS GS DS Uninterrupted Power Supplies I V = V , V = 0V 50 A AC Motor Drives DSS DS DSS GS T = 125C 2.75 mA High Speed Power Switching J Applications R V = 10V, I = 55A, Note 1 56 m DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100305B(9/14) IXFN110N60P3 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 55A, Note 1 65 105 S fs DS D C 18 nF iss C V = 0V, V = 25V, f = 1MHz 1550 pF oss GS DS C 8 pF rss R Gate Input Resistance 1.2 Gi t 63 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 55A GS DS DSS D t 106 ns (M4 screws (4x) supplied) d(off) R = 1 (External) G t 15 ns f Q 254 nC g(on) Q V = 10V, V = 0.5 V , I = 55A 80 nC gs GS DS DSS D Q 68 nC gd R 0.083 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 55A, -di/dt = 100A/ s F Q 1.6 C RM V = 100V, V = 0V R GS I 14.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537