TM IXFN 120N20 V = 200 V DSS HiPerFET I = 120 A D25 Power MOSFETs R = 17 m DS(on) Single MOSFET Die N-Channel Enhancement Mode t 250 ns rr Avalanche Rated, High dv/dt, Low t rr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C 200 V DSS J S V T = 25C to 150C R = 1 M 200 V DGR J GS G V Continuous 20 V GS V Transient 30 V GSM S I T = 25C 120 A D25 C D I T = 25C, pulse width limited by T 480 A DM C JM I T = 25C 120 A AR C E T = 25C64mJ AR C G = Gate D = Drain E T = 25C3J AS C S = Source dv/dt I I , di/dt 100 A/ s, V V 5 V/ns S DM DD DSS Either Source terminal at miniBLOC can be used T 150C, R = 2 J G as Main or Kelvin Source P T = 25C 600 W D C Features T -55 ... +150 C J T 150 C JM Encapsulating epoxy meets T -55 ... +150 C stg UL 94 V-0, flammability classification International standard package T 1.6 mm (0.063 in.) from case for 10 s - C L miniBLOC, with Aluminium nitride V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL isolation I 1 mA t = 1 s 3000 V~ ISOL TM Low R HDMOS process DS (on) M Mounting torque 1.5/13 Nm/lb.in. Rugged polysilicon gate cell structure d Terminal connection torque 1.5/13 Nm/lb.in. Unclamped Inductive Switching (UIS) rated Weight 30 g Low package inductance Fast intrinsic Rectifier Applications DC-DC converters Symbol Test Conditions Characteristic Values Battery chargers (T = 25C, unless otherwise specified) J min. typ. max. Switched-mode and resonant-mode power supplies V V = 0 V, I = 3mA 200 V DSS GS D DC choppers V V = V , I = 8mA 2 4 V Temperature and lighting controls GS(th) DS GS D Low voltage relays I V = 20 V, V = 0 200 nA GSS GS DS Advantages I V = V T = 25C 100 A DSS DS DSS J V = 0 V T = 125C 2 mA GS J Easy to mount R V = 10 V, I = 0.5 I 17 m Space savings DS(on) GS D D25 Note 1 High power density 2003 IXYS All rights reserved DS96538D(03/03)IXFN 120N20 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I Note 1 40 77 S fs DS D D25 C 9100 pF iss C V = 0 V, V = 25 V, f = 1 MHz 2200 pF oss GS DS C 1000 pF rss t 42 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 55 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 110 ns d(off) G Dim. Millimeter Inches t 40 ns Min. Max. Min. Max. f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 360 nC g(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 E 4.09 4.29 0.161 0.169 Q 160 nC F 14.91 15.11 0.587 0.595 gd G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.22 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Source-Drain Diode Characteristic Values Q 26.54 26.90 1.045 1.059 (T = 25C, unless otherwise specified) R 3.94 4.42 0.155 0.174 J S 4.72 4.85 0.186 0.191 Symbol Test Conditions min. typ. max. T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I V = 0 V 120 A S GS I Repetitive 480 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = 50A,-di/dt = 100 A/ s, V = 100 V Q 1.1 C F R RM I 13 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025