TM X2-Class HiPerFET V = 650V IXFN120N65X2 DSS Power MOSFET I = 108A D25 R 24m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25 C 108 A D25 C I T = 25 C, Pulse Width Limited by T 240 A DM C JM G = Gate D = Drain S = Source I T = 25 C 15 A A C E T = 25 C 3.5 J AS C P T = 25 C 890 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Isolation I 1mA t = 1 second 3000 V~ ISOL Isolation Voltage 2500 V~ High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Fast Intrinsic Diode Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Weight 30 g Low R DS(on) Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 3mA 650 V DSS GS D Applications V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies I V = V , V = 0V 50 A DC-DC Converters DSS DS DSS GS T = 125 C 5 mA PFC Circuits J AC and DC Motor Drives R V = 10V, I = 60A, Note 1 24 m DS(on) GS D Robotics and Servo Controls 2020 IXYS CORPORATION, All Rights Reserved DS100690C(1/20)IXFN120N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 46 76 S fs DS D R Gate Input Resistance 0.74 Gi C 14 nF iss C V = 0V, V = 25V, f = 1MHz 8700 pF oss GS DS C 5.5 pF rss Effective Output Capacitance C 455 pF Energy related V = 0V o(er) GS C V = 0 . 8 V 1930 pF o(tr) Time related DS DSS t 39 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 82 ns d(off) R = 1 (External) G t 12 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 60A 87 nC gs GS DS DSS D Q 65 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 60A, -di/dt = 100A/ s F Q 2.3 C RM V = 100V, V = 0V R GS I 21.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537