TM HiPerFET IXFN 130N30 V = 300 V DSS Power MOSFETs I = 130 A D25 Single Die MOSFET R = 22 m DS(on) D t < 250 ns N-Channel Enhancement Mode rr G Avalanche Rated, High dv/dt, Low t rr S S miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 300 V DSS J S V T = 25C to 150C R = 1 M 300 V DGR J GS G V Continuous 20 V GS V Transient 30 V GSM S I T = 25C 130 A D25 C D I Terminal (current limit) 100 A L(RMS) I T = 25C, pulse width limited by T 520 A DM C JM I T = 25C 100 A G = Gate D = Drain AR C S = Source E T = 25C85mJ AR C Either Source terminal at miniBLOC can be used E T = 25C4J as Main or Kelvin Source AS C dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150C, R = 2 J G Features P T = 25C 700 W D C International standard packages T -55 ... +150 C J miniBLOC, with Aluminium nitride T 150 C isolation JM TM T -55 ... +150 C Low R HDMOS process stg DS (on) Rugged polysilicon gate cell structure V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL Unclamped Inductive Switching (UIS) I 1 mA t = 1 s 3000 V~ ISOL rated M Mounting torque 1.5/13 Nm/lb.in. d Low package inductance Terminal connection torque 1.5/13 Nm/lb.in. Fast intrinsic Rectifier Weight 30 g Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25C, unless otherwise specified) J Battery chargers min. typ. max. Switched-mode and resonant-mode power supplies V V = 0 V, I = 3 mA 300 V DSS GS D DC choppers V V = V , I = 8 mA 2 4 V GH(th) DS GS D Temperature and lighting controls I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V T = 25C 100 A DSS DS DSS J Advantages V = 0 V T = 125C2mA GS J R V = 10 V, I = 0.5 I 22 m Easy to mount DS(on) GS D D25 Pulse test, t 300 s, Space savings duty cycle d 2 % High power density 2003 IXYS All rights reserved DS98531F(01/03)IXFN 130N30 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 60A, pulse test 70 92 S fs DS D C 14500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 2650 pF oss GS DS C 610 pF rss t 45 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 75 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 130 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 31 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 380 nC G(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 95 nC GS GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 180 nC GD G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.18 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 130 A S GS I Repetitive 520 A SM pulse width limited by T JM V I = 100A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t I = 30A, -di/dt = 100 A/ s, V = 100 V 250 ns rr F R Q 0.8 C RM I 8A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025