TM TM Polar3 HiPerFET V = 500V IXFN132N50P3 DSS Power MOSFET I = 112A D25 R 39m D DS(on) t 250ns rr G N-Channel Enhancement Mode Avalanche Rated S miniBLOC S E153432 Fast Intrinsic Rectifier S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J S V T = 25 C to 150 C, R = 1M 500 V DGR J GS D V Continuous 30 V GSS G = Gate D = Drain V Transient 40 V GSM S = Source I T = 25 C 112 A D25 C Either Source Terminal S can be used as I T = 25 C, Pulse Width Limited by T 330 A DM C JM the Source Terminal or the Kelvin Source (Gate Return) Terminal. I T = 25 C 66 A A C E T = 25 C2J AS C dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J P T = 25 C 1500 W D C T -55 ... +150 C Features J T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC with Aluminum Nitride V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Isolation I 1mA, t = 1s 3000 V~ ISOL Avalanche Rated M Mounting Torque for Base Plate 1.5/13 Nm/lb.in Low Package Inductance d Terminal Connection Torque 1.3/11.5 Nm/lb.in Fast Intrinsic Rectifier Low R and Q Weight 30 g DS(on) G Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 500 V DC-DC Converters DSS GS D Battery Chargers V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS Uninterrupted Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS AC Motor Drives T = 125C 3 mA J High Speed Power Switching R V = 10V, I = 66A, Note 1 39 m Applications DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100316B(6/14) IXFN132N50P3 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 68 110 S fs DS D C 18.6 nF iss C V = 0V, V = 25V, f = 1MHz 1710 pF oss GS DS C 12 pF rss R Gate Input Resistance 1.16 Gi t 42 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 66A GS DS DSS D t 90 ns (M4 screws (4x) supplied) d(off) R = 1 (External) G t 15 ns f Q 267 nC g(on) Q V = 10V, V = 0.5 V , I = 66A 95 nC gs GS DS DSS D Q 63 nC gd R 0.083 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 132 A S GS I Repetitive, Pulse Width Limited by T 530 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 66A, -di/dt = 100A/ s F Q 1.9 C RM V = 100V, V = 0V R GS I 16.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537