TM V = 200 V IXFN 140N20P PolarHT HiPerFET DSS I =115 A D25 Power MOSFET R 18 m DS(on) N-Channel Enhancement Mode t 150 ns rr Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V T = 25C to 175C 200 V DSS J miniBLOC, SOT-227 B (IXFN) V T = 25C to 175C R = 1 M 200 V E153432 DGR J GS V Continuous 20 V GS S V Transient 30 V GSM G I T = 25C 115 A D25 C I External lead current limit 100 A D(RMS) I T = 25C, pulse width limited by T 280 A DM C JM S I T = 25C60A AR C D E T = 25C 100 mJ AR C G = Gate D = Drain E T = 25C4J AS C S = Source dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS Either source tab S can be used forsource T 150C, R = 4 J G current or Kelvin gate return. P T = 25C 680 W D C T -55 ... +175 C J T 175 C JM T -55 ... +150 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C L z International standard package z V 50/60 Hz, RMS, 1 minute 2500 V~ Unclamped Inductive Switching (UIS) ISOL rated M Terminal torque 1.13/10 Nm/lb.in. d z Low package inductance Mounting torque 1.13/10 Nm/lb.in. - easy to drive and to protect z Weight 30 g Fast intrinsic diode Advantages Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J z Easy to mount z BV V = 0 V, I = 250 A 200 V Space savings DSS GS D z High power density V V = V , I = 4 mA 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150C 250 A GS J R V = 10 V, I = 70 A 18 m DS(on) GS D V = 15 V, I = 140A 14 m GS D Pulse test, t 300 s, duty cycle d 2 % DS99245E(03/06) 2006 IXYS All rights reserved IXFN 140N20P Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 70 A 50 84 S fs DS D C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1630 pF oss GS DS C 280 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 70 A 35 ns r GS DS DSS D t R = 3.3 (External) 150 ns d(off) G t 90 ns f Q 240 nC g(on) Q V = 10 V, V = 0.5 V , I = 70 A 50 nC gs GS DS DSS D Q 110 nC gd R 0.22K/W thJC R 0.05 K/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 140 A S GS I Repetitive 280 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 200 ns rr F Q -di/dt = 100 A/s 0.6 C RM I V = 100 V 6 A RM R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2