TM V I R HiPerFET DSS D25 DS(on) IXFK100N10 100 V 100 A 12 m Power MOSFETs IXFN150N10 100 V 150 A 12 m t 200 ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN V T = 25 C to 150 C 100 100 V DSS J G (TAB) D V T = 25 C to 150 C R = 1 M 100 100 V DGR J GS S V Continuous 20 20 V GS miniBLOC, SOT-227 B (IXFN) V Transient 30 30 V GSM E153432 S I T = 25 C 100 150 A D25 C G D I T = 120 C, limited by external leads 76 - A D120 C I T = 25 C, pulse width limited by T 560 560 A DM C JM G I T = 25 C7575A AR C S E T = 25 C3030mJ S D AR C S dv/dt I I , di/dt 100 A/ s, V V , 5 5 V/ns S DM DD DSS G = Gate D = Drain T 150 C, R = 2 J G S = Source TAB = Drain Either Source terminal at miniBLOC can be used P T = 25 C 500 520 W D C as Main or Kelvin Source T -55 ... +150 C J Features T 150 C JM International standard packages T -55 ... +150 C JEDEC TO-264 AA, epoxy meet stg UL 94 V-0, flammability classification T 1.6 mm (0.063 in) from case for 10 s 300 - C L miniBLOC with Aluminium nitride V 50/60 Hz, RMS t = 1 min - 2500 V~ isolation ISOL TM I 1 mA t = 1 s - 3000 V~ Low R HDMOS process ISOL DS (on) Rugged polysilicon gate cell structure M Mounting torque 0.9/6 1.5/13 Nm/lb.in. d Unclamped Inductive Switching (UIS) Terminal connection torque - 1.5/13 Nm/lb.in. rated Weight 10 30 g Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25 C, unless otherwise specified) J Synchronous rectification min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 1 mA 100 V DSS GS D power supplies V V = V , I = 8 mA 2 4 V GH(th) DS GS D DC choppers Temperature and lighting controls I V = 20 V , V = 0 200 nA GSS GS DC DS Low voltage relays I V = 0.8 V T = 25 C 400 A DSS DS DSS J V = 0 V T = 125 C2mA Advantages GS J Easy to mount R V = 10 V, I = 75 A 12 m DS(on) GS D Space savings Pulse test, t 300 s, duty cycle d 2 % High power density IXYS reserves the right to change limits, test conditions, and dimensions. 92803G(8/96) 2000 IXYS All rights reserved 1 - 4IXFK 100N10 IXFN 150N10 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, unless otherwise specified) J min. typ. max. g V = 10 V I = 50 A, pulse test 80 S fs DS D C 9000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 3200 pF oss GS DS C 1800 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 75 A 60 ns r GS DS DSS D t R = 1 (External), 100 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 60 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 360 nC A2 2.00 2.10 .079 .083 g(on) b 1.12 1.42 .044 .056 Q V = 10 V, V = 0.5 V , I = 75 A 75 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D b2 2.90 3.09 .114 .122 Q 180 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-264 AA 0.25 K/W thJC e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R TO-264 AA 0.15 K/W thCK K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 R miniBLOC, SOT-227 B 0.24 K/W L1 2.29 2.59 .090 .102 thJC P 3.17 3.66 .125 .144 R miniBLOC, SOT-227 B 0.05 K/W thCK Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Source-Drain Diode Characteristic Values T 1.57 1.83 .062 .072 (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. miniBLOC, SOT-227 B I V = 0 V IXFK 100 100 A S GS IXFN 150 150 A I Repetitive IXFK 100 400 A SM pulse width limited by T IXFN 150 600 A JM V I = 100 A, V = 0 V, 1.75 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 150 200 ns rr I = 25 A F Q 0.6 C M4 screws (4x) supplied RM -di/dt = 100 A/ s, V = 50 V Dim. Millimeter Inches R I 8A Min. Max. Min. Max. RM A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025