TM X2-Class HiPerFET V = 650V IXFN150N65X2 DSS Power MOSFET I = 145A D25 R 17m DS(on) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode miniBLOC, SOT-227 S E153432 S S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V S GSS V Transient 40 V GSM D I T = 25 C 145 A D25 C I T = 25 C, Pulse Width Limited by T 300 A G = Gate D = Drain DM C JM S = Source I T = 25 C20A A C E T = 25 C4J AS C P T = 25 C 1040 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ Isolation ISOL Isolation Voltage 2500 V~ I 1mA t = 1 second 3000 V~ ISOL High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Fast Intrinsic Diode Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Low R Weight 30 g DS(on) Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 650 V DSS GS D Applications V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125C 5 mA J AC and DC Motor Drives R V = 10V, I = 75A, Note 1 17 m Robotics and Servo Controls DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100691B(03/16)IXFN150N65X2 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 56 88 S fs DS D R Gate Input Resistance 0.57 Gi C 21.0 nF iss C V = 0V, V = 25V, f = 1MHz 12.5 nF oss GS DS C 42 pF rss Effective Output Capacitance C 600 pF o(er) Energy related V = 0V GS C 2800 pF V = 0.8 V o(tr) Time related DS DSS t 55 ns d(on) Resistive Switching Times t 30 ns (M4 screws (4x) supplied) r V = 10V, V = 0.5 V , I = 75A GS DS DSS D t 100 ns d(off) R = 1 (External) G t 13 ns f Q 355 nC g(on) Q V = 10V, V = 0.5 V , I = 75A 130 nC gs GS DS DSS D Q 110 nC gd R 0.12 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 150 A S GS I Repetitive, Pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 190 ns rr I = 75A, -di/dt = 300A/ s F Q 4.6 C RM V = 100V, V = 0V R GS I 48.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537