TM V I R t DSS D25 DS(on) rr HiPerFET IXFN170N10 100V 170A 10m 200ns Power MOSFET IXFK170N10 100V 170A 10m 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 G D (TAB) V T = 25C to 150C 100 100 V DSS J D S V T = 25C to 150C 100 100 V DGR J V Continuous 20 20 V GS V Transient 30 30 V GSM miniBLOC, SOT-227 B (IXFN) E153432 I T = 25 C 170 170 A D25 C S I T = 125 C 76 NA D125 C G I T = 25 C 680 680 A DM C I T = 25 C 170 170 A AR C E T = 25 C 60 60 mJ AR C S dv/dt I I , di/dt 100 A/ s, V V 5 5 V/ns D S DM DD DSS T 150 C, R = 2 J G P T = 25 C 560 600 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +150 C J T 150 C Either Source terminal at miniBLOC can be used JM as Main or Kelvin Source T -55 ... +150 C stg T 1.6 mm (0.063 in) from case for 10 s 300 N/A C L Features International standard packages V 50/60 Hz, RMS t = 1 min N/A 2500 V~ ISOL Encapsulating epoxy meets I 1 mA t = 1 s N/A 3000 V~ ISOL UL 94 V-0, flammability classification M Mounting torque 0.9/6 1.5/13 Nm/lb.in. miniBLOC with Aluminium nitride d Terminal connection torque N/A 1.5/13 Nm/lb.in. isolation TM Low R HDMOS process DS (on) Weight 10 30 g Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Symbol Test Conditions Characteristic Values Fast intrinsic Rectifier (T = 25 C, unless otherwise specified) Min. Typ. Max. J Applications V V = 0 V, I = 3mA 100 V DSS GS D DC-DC converters V temperature coefficient 0.077 %/K DSS Synchronous rectification Battery chargers V V = V , I = 8mA 2 4 V GS(th) DS GS D Switched-mode and resonant-mode V temperature coefficient -0.183 %/K GS(th) power supplies DC choppers I V = 20V, V = 0V 200 nA GSS GS GS Temperature and lighting controls I V = 0.8 V V T = 25 C 400 A DSS DS DSS J Low voltage relays V = 0 V T = 125 C2mA GS J Advantages R V = 10 V, I = 0.5 I 10 m DS(on) GS D D25 Easy to mount Pulse test, t 300 ms, Space savings duty cycle d 2 % High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97505D (7/00) 2000 IXYS All rights reserved 1 - 4IXFK170N10 IXFN170N10 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, unless otherwise specified) Min. Typ. Max. J g V = 10 V I = 0.5 I , pulse test 65 S fs DS D D25 C 10,300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 2,200 pF oss GS DS C 1,200 pF rss t 40 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 90 ns r GS DS DSS D D25 t R = 1 (External), 158 ns d(off) G t 79 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 515 nC A 4.82 5.13 .190 .202 g(on) A1 2.54 2.89 .100 .114 Q V = 10 V, V = 0.5 V , I = 0.5 I 62 nC A2 2.00 2.10 .079 .083 gs GS DS DSS D D25 b 1.12 1.42 .044 .056 Q 276 nC b1 2.39 2.69 .094 .106 gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R TO-264 AA 0.22 K/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-264 AA 0.15 K/W thCK e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R miniBLOC, SOT-227 B 0.21 K/W K 0.00 0.25 .000 .010 thJC L 20.32 20.83 .800 .820 R miniBLOC, SOT-227 B 0.05 K/W L1 2.29 2.59 .090 .102 thCK P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Source-Drain Diode T 1.57 1.83 .062 .072 (T = 25 C, unless otherwise specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. miniBLOC, SOT-227 B I V = 0 170 A S GS I Repetitive 680 A SM pulse width limited by T JM V I = 100 A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 175 ns rr Q I = 50 A, -di/dt = 100 A/ s, V = 100 V 1.1 C RM F R I 12.6 A RM M4 screws (4x) supplied Dim. Millimeter Inches Notes: 1. R = 1 M GS Min. Max. Min. Max. 2. Pulse width limited by T A 31.50 31.88 1.240 1.255 JM. B 7.80 8.20 0.307 0.323 3. Chip capability C 4.09 4.29 0.161 0.169 4. Current limited by external leads D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025