TM TM Polar HiPerFET V = 300V IXFN170N30P DSS Power MOSFET I = 138A D25 R 18m DS(on) N-Channel Enhancement Mode t 200ns rr Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 V T = 25 C to 150 C 300 V DSS J S V T = 25 C to 150 C, R = 1M 300 V DGR J GS G V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 138 A S D25 C I T = 25 C, Pulse Width Limited by T 500 A D DM C JM I T = 25 C85A A C E T = 25 C5J G = Gate D = Drain AS C S = Source dv/dt I I , V V ,T 150 C 20 V/ns S DM DD DSS J Either Source terminal at miniBLOC can be used P T = 25 C 890 W as Main or Kelvin Source D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL International Standard Package I 1mA t = 1 second 3000 V~ ISOL miniBLOC, with Aluminium Nitride M Mounting Torque 1.5/13 Nm/lb.in Isolation d Terminal Connection Torque 1.3/11.5 Nm/lb.in Isolation Voltage 2500 V~ High Current Handling Capability Weight 30 g Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Low Gate Charge Results in Simple Drive Requirement Improved Gate, Avalanche and Symbol Test Conditions Characteristic Values Dynamic dv/dt Ruggedness (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J BV V = 0V, I = 3mA 300 V DSS GS D Applications V V = V , I = 8mA 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 200 nA DC-DC Coverters GSS GS DS Battery Chargers I V = V , V = 0V 25A DSS DS DSS GS Switched-Mode and Resonant-Mode T = 125C 1.5 mA J Power Supplies DC Choppers R V = 10V, I = 85A, Note 1 18 m DS(on) GS D AC and DC Motor Control Uninterrupted Power Supplies High Speed Power Switching Applications 2015 IXYS CORPORATION, All Rights Reserved DS100001A(9/15) IXFN170N30P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 57 95 S fs DS D C 20 nF iss C V = 0V, V = 25V, f = 1MHz 2450 pF oss GS DS C 27 pF rss t 41 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I = 85A GS DS DSS D t 79 ns d(off) R = 1 (External) G t 16 ns f Q 258 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 85A 82 nC gs GS DS DSS D Q 78 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 170 A S GS I Repetitive, Pulse Width Limited by T 500 A SM JM V I = 85A, V = 0V, Note 1 1.3 V SD F GS t 200 ns I = 85A, -di/dt = 150A/ s rr F Q 1.85 C RM V = 100V R I 21 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537