TM X2-Class HiPerFET V = 650V IXFN170N65X2 DSS Power MOSFET I = 170A D25 R 13m DS(on) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode miniBLOC, SOT-227 S E153432 S S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V S GSS V Transient 40 V GSM D I T = 25 C 170 A D25 C I T = 25 C, Pulse Width Limited by T 340 A G = Gate D = Drain DM C JM S = Source I T = 25 C15A A C E T = 25 C5J AS C P T = 25 C 1170 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ Isolation ISOL Isolation Voltage 2500 V~ I 1mA t = 1 second 3000 V~ ISOL High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Fast Intrinsic Diode Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Low R Weight 30 g DS(on) Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 650 V DSS GS D Applications V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125C 5 mA J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 13 m Robotics and Servo Controls DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100692A(03/16)IXFN170N65X2 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 55 90 S fs DS D R Gate Input Resistance 0.56 Gi C 27.0 nF iss C V = 0V, V = 25V, f = 1MHz 15.8 nF oss GS DS C 12.4 pF rss Effective Output Capacitance C 780 pF o(er) Energy related V = 0V GS C 3400 pF V = 0.8 V o(tr) Time related DS DSS t 60 ns d(on) Resistive Switching Times t 15 ns (M4 screws (4x) supplied) r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 133 ns d(off) R = 1 (External) G t 6 ns f Q 434 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 166 nC gs GS DS DSS D D25 Q 137 nC gd R 0.107 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 170 A S GS I Repetitive, Pulse Width Limited by T 680 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 270 ns rr I = 85A, -di/dt = 100A/ s F Q 3.1 C RM V = 100V, V = 0V R GS I 22.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537