TM HiPerFET V = 100V IXFN180N10 DSS Power MOSFET I = 180A D25 R 8m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 100 V DSS J V T = 25 C to 150 C, R = 1M 100 V DGR J GS S V Continuous 20 V GSS D V Transient 30 V GSM I T = 25 C 180 A D25 C G = Gate D = Drain S = Source I T = 25 C, Pulse Width Limited by T 720 A DM C JM I T = 25 C 180 A Either Source Terminal S can be used as A C the Source Terminal or the Kelvin Source E T = 25 C3J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 5 V/ns S DM DD DSS J P T = 25 C 600 W D C Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg International Standard Package miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Isolation I 1mA, t = 1s 3000 V~ ISOL Dynamic dv/dt Rating M Mounting Torque for Base Plate 1.5/13 Nm/lb.in d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in Fast Intrinsic Rectifier Weight 30 g Low R DS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = 0V, I = 3mA 100 V DSS GS D V V = V , I = 8mA 2.0 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS DC-DC Converters I V = V , V = 0V 100 A Battery Chargers DSS DS DSS GS T = 125C 2 mA Switch-Mode and Resonant-Mode J Power Supplies R V = 10V, I = 90A, Note 1 8 m DS(on) GS D Synchronous Rectification Low Voltage relays DC Chopper Temperature and Lighting Controls 2014 IXYS CORPORATION, All Rights Reserved DS98546C(02/14) IXFN180N10 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 45 76 S fs DS D C 10.90 nF iss C V = 0V, V = 25V, f = 1MHz 3.55 nF oss GS DS C 1.94 nF rss t 50 ns d(on) Resistive Switching Times t 90 ns r V = 10V, V = 0.5 V , I = 90A GS DS DSS D t 140 ns d(off) R = 1 (External) G t 65 ns (M4 screws (4x) supplied) f Q 390 nC g(on) Q V = 10V, V = 0.5 V , I = 90A 55 nC gs GS DS DSS D Q 195 nC gd R 0.21 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 180 A S GS I Repetitive, Pulse Width Limited by T 720 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 50A, -di/dt = 100A/ s F Q 1.1 C RM V = 50V, V = 0V I R GS 13 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537