TM V = 150 V IXFN 180N15P PolarHT HiPerFET DSS I = 150 A D25 Power MOSFET R 11 m N-Channel Enhancement Mode DS(on) Avalanche Rated t 200 ns rr Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25 C to 175 C 150 V DSS J S V T = 25 C to 175 C R = 1 M 150 V DGR J GS G V Continuous 20 V DSS V Transient 30 V GSM I T = 25 C 150 A D25 C S I External lead current limit 100 A D D(RMS) I T = 25 C, pulse width limited by T 380 A DM C JM G = Gate D = Drain I T = 25C60A AR C S = Source E T = 25 C 100 mJ AR C Either Source terminal S can be used as the E T = 25C4J AS C Source terminal or the Kelvin Source (gate return) terminal. dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 680 W D C Features T -55 ... +175 C J T 175 C JM International standard package T -55 ... +150 C stg Encapsulating epoxy meets M Mounting torque 1.5/13 Nm/lb.in. d UL 94 V-0, flammability classification Terminal connection torque (M4) 1.5/13 Nm/lb.in. miniBLOC with Aluminium nitride V 50/60 Hz t = 1 min 2500 V~ ISOL isolation I 1 mA t = 1 s 3000 V~ ISOL l Fast recovery diode l T 1.6 mm (0.062 in.) from case for 10 s 300 C Unclamped Inductive Switching (UIS) L rated l Weight 30 g Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. Advantages J V V = 0 V, I = 250 A 150 V l DSS GS D Easy to mount l Space savings V V = V , I = 4 mA 2.5 5.0 V GS(th) DS GS D l High power density I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V V = 0 V 25 A DSS DS DSS, GS T = 150 C 500 A J R V = 10 V, I = 90 A 11 m DS(on) GS D Pulse test, t 300 s, duty cycle d 2 % DS99241E(01/06) 2006 IXYS All rights reserved IXFN 180N15P Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) SOT-227B Outline J Min. Typ. Max. g V = 10 V I = 90 A, pulse test 55 86 S fs DS D C 7000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 2250 pF oss GS DS C 515 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 90 A 32 ns r GS DS DSS D t R = 3.3 (External) 150 ns d(off) G t 36 ns f Q 240 nC g(on) Q V = 10 V, V = 0.5 V , I = 90 A 55 nC gs GS DS DSS D Q 140 nC gd R 0.22 CW thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. typ. Max. I V = 0 V 180 A S GS I Repetitive 380 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 200 ns rr F Q -di/dt = 100 A/s 0.6 C RM I V = 100 V, V = 0 V 6 RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2