Preliminary Technical Information TM GigaMOS V = 250V IXFN180N25T DSS I = 168A Power MOSFET D25 R 12.9m DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25 C 168 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 500 A DM C JM S = Source I T = 25 C90A A C E T = 25 C5J AS C Either Source Terminal S can be used as dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. P T = 25 C 900 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package T Maximum Lead Temperature for Soldering 300 C miniBLOC, with Aluminium Nitride L T Plastic Body for 10s 260 C Isolation SOLD Isolation voltage 2500 V~ V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL High Current Handling Capability I 1mA t = 1 second 3000 V~ ISOL Fast Intrinsic Diode M Mounting Torque 1.5/13 Nm/lb.in d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in Low R DS(on) Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 250 V DSS GS D DC-DC Converters V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D Battery Chargers I V = 20V, V = 0V 200 nA GSS GS DS Switched-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS DC Choppers T = 125C 2.5 mA J AC Motor Drives R V = 10V, I = 90A, Note 1 12.9 m DS(on) GS D Uninterruptible Power Supplies High Speed Power Switching Applications 2014 IXYS CORPORATION, All Rights Reserved DS100130A(9/14) IXFN180N25T Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 23.8 nF iss C V = 0V, V = 25V, f = 1MHz 2070 pF oss GS DS C 47 pF rss R Gate Input Resistance 1.1 Gi t 35 ns d(on) Resistive Switching Times t 52 ns r V = 15V, V = 0.5 V , I = 90A GS DS DSS D t 88 ns d(off) R = 1 (External) G t 20 ns f (M4 screws (4x) supplied) Q 364 nC g(on) Q V = 10V, V = 0.5 V , I = 90A 137 nC gs GS DS DSS D Q 60 nC gd R 0.138C/W thJC R 0.05C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 180 A S GS I Repetitive, Pulse Width Limited by T 720 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 200 ns rr I = 90A, -di/dt = 100A/ s F Q 0.77 C RM V = 75V, V = 0V R GS I 11 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537