TM V I R HiPerFET DSS D25 DS(on) IXFN 200 N06 60 V 200 A 6 m Power MOSFETs IXFN 200 N07 70 V 200 A 6 m N-Channel Enhancement Mode t 250 ns rr Avalanche Rated, High dv/dt, Low t rr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C N07 70 V DSS J V T = 25C to 150C R = 1 M N06 60 V S DGR J GS G V Continuous 20 V GS V Transient 30 V GSM S I T = 25C Chip capability 200N06/200N07 200 A D25 C I Terminal current limit 100 A D L(RMS) I T = 25C, pulse width limited by T 600 A DM C JM G = Gate D = Drain I T = 25C 100 A S = Source AR C Either Source terminal at miniBLOC can be used E T = 25C30mJ as Main or Kelvin Source AR C E T = 25C 2 J AS C dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150C, R = 2 J G P T = 25C 520 W D C Features T -55 ... +150 C J z International standard packages T 150 C JM z T -55 ... +150 C miniBLOC with Aluminium nitride stg isolation V 50/60 Hz, RMS t = 1 min - 2500 V~ z ISOL TM Low R HDMOS process DS (on) I 1 mA t = 1 s - 3000 V~ ISOL z Rugged polysilicon gate cell structure z M Mounting torque 1.5/13 Nm/lb.in. Unclamped Inductive Switching (UIS) d Terminal connection torque - 1.5/13 Nm/lb.in. rated z Low package inductance Weight 30 g z Fast intrinsic Rectifier Applications z DC-DC converters z Synchronous rectification Symbol Test Conditions Characteristic Values z Battery chargers (T = 25C, unless otherwise specified) J z Switched-mode and resonant-mode min. typ. max. power supplies z V V = 0 V, I = 1 mA N06 60 V DC choppers DSS GS D z N07 70 V Temperature and lighting controls z V V = V , I = 8 mA 2 4 V Low voltage relays GS (th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS Advantages I V = 0.8 V T = 25C 400 A DSS DS DSS J V = 0 V T = 125C2mA z GS J Easy to mount z R V = 10 V, I = 0.5 I 6m Space savings DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % z High power density 2003 IXYS All rights reserved DS97533B(02/03) Not FNot For New Designor New Design Not FNot FNot For New Designor New Designor New Design IXFN 200N06 IXFN 200N07 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 60 80 S fs DS D D25 C 9000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 4000 pF oss GS DS C 2400 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 60 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 100 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 60 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 480 nC g(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 60 nC gs GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 240 nC gd G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R miniBLOC, SOT-227 B 0.24 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R miniBLOC, SOT-227 B 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 Source-Drain Diode Characteristic Values U -0.05 0.1 -0.002 0.004 (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 200 A S GS I Repetitive pulse width limited by T 600 A SM JM V I = 100 A, V = 0 V, 1.7 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 150 250 ns rr I = 25 A F Q 0.7 C RM -di/dt = 100 A/ s, V = 50 V I 9A R RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025