TM TM Polar HiPerFET V = 200V IXFN210N20P DSS Power MOSFET I = 188A D25 R 10.5m DS(on) t 200ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 200 V DSS J V T = 25C to 175C, R = 1M 200 V DGR J GS S V Continuous 20 V GSS D V Transient 30 V GSM I T = 25C 188 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 600 A DM C JM S = Source I T = 25C 105 A A C E T = 25C4J AS C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source dv/dt I I , V V ,T 175C 20 V/ns S DM DD DSS J (Gate Return) Terminal. P T = 25C 1070 W D C T -55 ... +175 C J T 175 C Features JM T -55 ... +175 C stg z International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C L z miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1min 2500 V~ Isolation ISOL z Low Package Inductance I 1mA t = 1s 3000 V~ ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. z d Low R and Q DS(ON) G Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Fast Intrinsic Diode Weight 30 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 200 V Applications DSS GS D V V = V , I = 8mA 2.5 4.5 V z GS(th) DS GS D DC-DC Coverters z Battery Chargers I V = 20V, V = 0V 200 nA GSS GS DS z Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies DSS DS DSS GS z T = 150C 2 mA DC Choppers J z AC and DC Motor Drives R V = 10V, I = 105A, Note 1 10.5 m z DS(on) GS D Uninterrupted Power Supplies z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS100019A(05/10) IXFN210N20P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 103 S fs DS D C 18.6 nF iss C V = 0V, V = 25V, f = 1MHz 3270 pF oss GS DS C 80 pF rss t 43 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 105A GS DS DSS D t 70 ns d(off) R = 1 (External) G t 18 ns f Q 255 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 105A 94 nC gs GS DS DSS D Q 83 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 210 A S GS I Repetitive, Pulse Width Limited by T 800 A SM JM V I = 105A, V = 0V, Note 1 1.3 V SD F GS t 200 ns rr I = 105A, -di/dt = 150A/ s F Q 1.34 C RM V = 100V R I 18 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537