X-On Electronics has gained recognition as a prominent supplier of IXFN210N30P3 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXFN210N30P3 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXFN210N30P3 IXYS

IXFN210N30P3 electronic component of IXYS
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See Product Specifications
Part No.IXFN210N30P3
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFN210N30P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 49.224 ea
Line Total: USD 49.22 
Availability - 1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 49.224
20 : USD 48.328
200 : USD 47.334

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Transistor Type
Brand
Number Of Channels
Transistor Polarity
Channel Mode
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Qg - Gate Charge
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Tradename
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
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We are delighted to provide the IXFN210N30P3 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFN210N30P3 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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The IXFN210N30P3 is a power MOSFET manufactured by IXYS Corporation. It is a 100V, 130A device suitable for use in high current, low-voltage applications. It has low gate charge, and is capable of switching frequencies up to 1 MHz. The IXFN210N30P3 has a maximum drain-source voltage rating of 100V, a maximum drain current of 130A, and a maximum gate threshold voltage of 4V. It also has an on-state resistance of 0.63O, a threshold gate voltage of 2V, and a gate-source voltage of ±20V. The device is RoHS compliant, RoHS Halogen-Free, and UL Certified.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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