The IXFN210N30P3 is a power MOSFET manufactured by IXYS Corporation. It is a 100V, 130A device suitable for use in high current, low-voltage applications. It has low gate charge, and is capable of switching frequencies up to 1 MHz. The IXFN210N30P3 has a maximum drain-source voltage rating of 100V, a maximum drain current of 130A, and a maximum gate threshold voltage of 4V. It also has an on-state resistance of 0.63O, a threshold gate voltage of 2V, and a gate-source voltage of ±20V. The device is RoHS compliant, RoHS Halogen-Free, and UL Certified.