TM IXFN 21N100Q HiPerFET V = 1000 V DSS Power MOSFETs I = 21 A D25 Q-Class R = 0.50 DS(on) Single MOSFET Die t 250 ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings S G V T = 25C to 150C 1000 V DSS J V T = 25C to 150C R = 1 M 1000 V DGR J GS V Continuous 20 V GS S V Transient 30 V D GSM I T = 25C 21 A G = Gate D = Drain D25 C S = Source I T = 25C, pulse width limited by T 84 A DM C JM Either Source terminal at miniBLOC can be used I T = 25C21A AR C as Main or Kelvin Source E T = 25C 60 mJ AR C Features E 2.5 J AS IXYS advanced low Q process g dv/dt I I , di/dt 100 A/ s, V V , 10 V/ns Low gate charge and capacitances S DM DD DSS T 150C, R = 2 - easier to drive J G -faster switching P T = 25C 520 W D C Unclamped Inductive Switching (UIS) T -55 to +150 C rated J T 150 C Low R JM DS (on) T -55 to +150 C Fast intrinsic diode stg V 50/60 Hz, RMS t = 1 min 2500 V~ International standard package ISOL I 1 mA t = 1 s 3000 V~ ISOL miniBLOC with Aluminium nitride M Mounting torque 1.5/13 Nm/lb.in. isolation for low thermal resistance d Terminal connection torque 1.5/13 Nm/lb.in. Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) Weight 30 g Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25C, unless otherwise specified) J Battery chargers min. typ. max. Switched-mode and resonant-mode V V = 0 V, I = 1 mA 1000 V DSS GS D power supplies V V = V , I = 4 mA 3 5.0 V GS(th) DS GS D DC choppers Temperature and lighting controls I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 100 A DSS DS DSS Advantages V = 0 V T = 125C2mA GS J Easy to mount R V = 10 V, I = 0.5 I 0.50 Space savings DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % High power density DS98762B(01/03 2003 IXYS All rights reservedIXFN 21N100Q Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 20 V I = 0.5 I , pulse test 16 22 S fs DS D D25 C 5900 pF iss C V = 0 V, V = 25 V, f = 1 MHz 550 pF oss GS DS C 90 pF rss t 21 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 18 ns r GS DS DSS D D25 18 t R = 1 (External) 60 ns M4 screws (4x) supplied d(off) G t 12 ns Dim. Millimeter Inches f Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 Q 170 nC G(on) B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 38 nC GS GS DS DSS D D25 D 4.09 4.29 0.161 0.169 Q 75 nC E 4.09 4.29 0.161 0.169 GD F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 R 0.24 K/W thJC H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 R 0.05 K/W thCK K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 Source-Drain Diode Characteristic Values P 4.95 5.97 0.195 0.235 (T = 25C, unless otherwise specified) J Q 26.54 26.90 1.045 1.059 Symbol Test Conditions min. typ. max. R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 I V = 0 V 21 A S GS U -0.05 0.1 -0.002 0.004 I Repetitive pulse width limited by T 84 A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t 250 ns rr Q I = I , -di/dt = 100 A/ s, V = 100 V 1.4 C RM F S R I 8A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025