Power MOSFET V = 100V IXFN230N10 DSS Single Die MOSFET I = 230A D25 R 6.0m DS(on) N-Channel Enhancement Mode t 250ns rr Avalanche Rated, High dv/dt, Low t rr miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings S V T = 25C to 150C 100 V DSS J G V T = 25C to 150C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM S I T = 25C, Chip capability 230 A D25 C D I External lead current limit 200 A L(RMS) I T = 25C, pulse width limited by T 920 A G = Gate D = Drain DM C JM S = Source I T = 25C 100 A A C Either Source terminal at miniBLOC can be used E T = 25C4J AS C as Main or Kelvin Source dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 700 W d C International standard package T -55 ... +150 C J miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C stg TM Low R HDMOS process DS (on) V 50/60 Hz, RMS t = 1min 2500 V~ ISOL Rugged polysilicon gate cell structure I 1mA t = 1s 3000 V~ ISOL Avalanche rated M Mounting torque 1.5/13 Nm/lb.in. d Guaranteed FBSOA Terminal connection torque 1.3/11.5 Nm/lb.in. Low package inductance Weight 30 g Fast intrinsic Rectifier Advantages Easy to mount Space savings Symbol Test Conditions Characteristic Values High power density (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 3mA 100 V DSS GS D Applications V V = V , I = 8mA 2.0 4.0 V GS(th) DS GS D DC-DC converters I V = 20V, V = 0V 200 nA GSS GS DS Battery chargers I V = V 100 A DSS DS DSS Switched-mode and resonant-mode V = 0V T = 125C 2 mA GS J power supplies R V = 10V, I = 0.5 I , Note 1 6.0 m DS(on) GS D D25 DC choppers Temperature and lighting controls DS98548F(12/08) 2008 IXYS Corporation, All rights reservedIXFN230N10 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 97 S fs DS D C 19 nF iss C V = 0V, V = 25V, f = 1MHz 5600 pF oss GS DS C 2750 pF rss t 40 ns d(on) Resistive Switching Times t 150 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 112 ns d(off) R = 1 (External) G t 60 ns f M4 screws (4x) supplied Q 570 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 A 31.50 31.88 1.240 1.255 Q 290 nC B 7.80 8.20 0.307 0.323 gd C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 R 0.18 C/W thJC E 4.09 4.29 0.161 0.169 R 0.05 C/W F 14.91 15.11 0.587 0.595 thCS G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 Source-Drain Diode O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 Symbol Test Conditions Characteristic Values R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 (T = 25C, unless otherwise specified) Min. Typ. Max. J T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I V = 0V 230 A S GS I Repetitive, pulse width limited by T 920 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 250 ns rr I = 50A, -di/dt = 100A/s, V = 50V Q 1.2 C F R RM I 9.0 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537