Advance Technical Information TM GigaMOS TrenchT2 V = 150V IXFN240N15T2 DSS TM HiperFET I = 240A D25 R 5.2m Power MOSFET DS(on) t 140ns rr N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings V T = 25C to 175C 150 V DSS J V T = 25C to 175C, R = 1M 150 V DGR J GS S V Continuous 20 V GSS D V Transient 30 V GSM I T = 25C (Chip Capability) 240 A D25 C G = Gate D = Drain I External Lead Current Limit 200 A S = Source L(RMS) I T = 25C, Pulse Width Limited by T 600 A DM C JM I T = 25C 120 A Either Source Terminal S can be used as A C the Source Terminal or the Kelvin Source E T = 25C2J AS C ( Gate Return ) Terminal. dV/dt I I , V V , T 175C 20 V/ns S DM DD DSS J Features P T = 25C 830 W D C T -55 ... +175 C International Standard Package J T 175 C miniBLOC, with Aluminium Nitride JM T -55 ... +175 C stg Isolation Isolation voltage 2500 V~ T 1.6mm (0.062 in.) from Case for 10s 300 C L High Current Handling Capability T Plastic Body for 10s 260 C SOLD Fast Intrinsic Diode V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Avalanche Rated I 1mA t = 1 second 3000 V~ ISOL Low R DS(on) M Mounting Torque 1.5/13 Nm/lb.in. d Advantages Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 150 V Synchronous Recification DSS GS D DC-DC Converters V V = V , I = 8mA 2.5 5.0 V GS(th) DS GS D Battery Chargers I V = 20V, V = 0V 200 nA Switched-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS DC Choppers T = 150C 3 mA J AC Motor Drives R V = 10V, I = 60A, Note 1 4.1 5.2 m Uninterruptible Power Supplies DS(on) GS D High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS100192(09/09) IXFN240N15T2 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 125 210 S fs DS D C 32 nF iss C V = 0V, V = 25V, f = 1MHz 2280 pF oss GS DS C 270 pF rss R Gate Input Resistance 1.50 Gi t 48 ns d(on) Resistive Switching Times t 125 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 77 ns d(off) R = 1 (External) G t 145 ns f (M4 screws (4x) supplied) Q 460 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 125 nC gs GS DS DSS D D25 Q 130 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 240 A S GS I Repetitive, Pulse Width Limited by T 960 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 140 ns rr I = 120A, -di/dt = 100A/s F Q 410 nC RM V = 75V, V = 0V R GS I 8.2 A RM Note 1. Pulse test, t 300s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537