TM HiPerRF V = 1000V IXFN24N100F DSS I = 24A Power MOSFETs D25 R 390m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode miniBLOC, SOT-227 Avalanche Rated, Low Q , Low g E153432 Intrinsic R , High dV/dt, Low t g rr S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 20 V S GSS V Transient 30 V D GSM I T = 25C 24 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 96 A DM C JM S = Source I T = 25C24A A C E T = 25C3J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source dV/dt I I , di/dt < 100A/ s, V V 10 V/ns ( Gate Return ) Terminal. S DM DD DSS T 150C, R = 2 J G P T = 25C 600 W D C Features T -55 ... +150 C J T 150 C z JM RF capable MOSFETs T -55 ... +150 C z stg Double metal process for low gate resistance T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10s 260 C Avalanche rated SOLD z Low package inductance V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL z Fast intrinsic rectifier I 1mA t = 1 second 3000 V~ ISOL M Mounting Torque 1.5/13 Nm/lb.in. Applications d Terminal Connection Torque 1.3/11.5 Nm/lb.in. z DC-DC converters Weight 30 g z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z Pulse generation Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Laser drivers J BV V = 0V, I = 1mA 1000 V DSS GS D Advantages V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D z Easy to mount I V = 20V, V = 0V 200 nA z GSS GS DS Space savings z High power density I V = V , V = 0V 100 A DSS DS DSS GS T = 125C 3 mA J R V = 10V, I = 12A, Note 1 390 m DS(on) GS D 2002 IXYS CORPORATION, All Rights Reserved DS98875A(12/02) IXFN24N100F Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 12A, Note 1 16 24 S fs DS D C 6600 pF iss C V = 0V, V = 25V, f = 1MHz 760 pF oss GS DS C 230 pF rss t 22 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 12A GS DS DSS D t 52 ns d(off) R = 1 (External) G t 11 ns f Q 195 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 12A 40 nC gs GS DS DSS D Q 100 nC gd R 0.21 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = 24A, V = 0V, Note 1 1.5 V SD F GS t 250 ns I = 24A, V = 0V rr F GS Q 1.4 C RM -di/dt = 100A/s I 10 A V = 100V RM R Note 1: Pulse Test, t 300s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537