TM TM Polar HiPerFET V = 1200V IXFN26N120P DSS Power MOSFET I = 23A D25 R 500m DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V DSS J V T = 25C to 150C, R = 1M 1200 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 23 A G = Gate D = Drain D25 C I T = 25C, Pulse Width Limited by T 60 A S = Source DM C JM I T = 25C13A Either Source Terminal S can be used as A C E T = 25C 1.5 J the Source Terminal or the Kelvin Source AS C (Gate Return) Terminal. P T = 25C 695 W D C dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM z International Standard Package T -55 ... +150 C stg z Low Intrinsic Gate Resistance z miniBLOC with Aluminum Nitride V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Isolation I 1mA, t = 1s 3000 V~ ISOL z Fast Intrinsic Diode z M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. Dynamic dv/dt Rating d Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Avalanche Rated z Low R and Q Weight 30 g DS(ON) G z Low Package Inductance Advantages z High Power Density Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C Unless Otherwise Specified) Min. Typ. Max. z J Space Savings BV V = 0V, I = 3mA 1200 V DSS GS D V V = V , I = 1mA 3.5 6.5 V Applications GS(th) DS GS D z I V = 30V, V = 0V 200 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 50 A z DSS DS DSS GS DC-DC Converters T = 125C 5 mA z J Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators R V = 10V, I = 13A, Note 1 500 m DS(on) GS D z High Voltage Pulse Power Supplies z AC and DC Motor Drives z High Speed Power Switching Application 2011 IXYS CORPORATION, All Rights Reserved DS99887B10/11)IXFN26N120P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 13A, Note 1 13 21 S fs DS D C 14 nF iss C V = 0V, V = 25V, f = 1MHz 725 pF oss GS DS C 50 pF rss R Gate Input Resistance 1.5 Gi t 56 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 13A GS DS DSS D t 76 ns R = 1 (External) d(off) (M4 screws (4x) supplied) G t 58 ns f Q 255 nC g(on) Q V = 10V, V = 0.5 V , I = 13A 87 nC gs GS DS DSS D Q 98 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 26 A S GS I Repetitive, Pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 13A, -di/dt = 100A/s F Q 1.3 C RM V = 100V, V = 0V R GS I 12.0 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537