TM V I R HiPerFET Power MOSFETs DSS D25 DS(on) Single Die MOSFET 900V 25A 330m IXFN25N90 IXFN26N90 900V 26A 300m N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low t rr Fast Intrinsic Diode miniBLOC, SOT-227 Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 900 V DSS J S V T = 25C to 150C, R = 1M 900 V G DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 25N90 25 A D25 C S I T = 25C, pulse width limited by T 25N90 100 A DM C JM D I T = 25C 26N90 26 A D25 C I T = 25C, pulse width limited by T 26N90 104 A G = Gate D = Drain DM C JM S = Source I T = 25C 25N90 25 A AR C I T = 25C 26N90 26 A Either Source terminal S can be used as the AR C Source terminal or the Kelvin Source (gate E T = 25C64mJ AR C return) terminal. E T = 25C3J AS C dV/dt I I , V V ,T 150C 5 V/ns S DM DD DSS J Features P T = 25C 600 W D C z T -55 ... +150 C International standard package J z miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C z TM stg Low R HDMOS process DS(ON) z Avalanche Rated T 1.6mm (0.062 in.) from case for 10s 300 C L z Low package inductance V 50/60 Hz, RMS t = 1min 2500 V~ ISOL z Fast intrinsic diode I 1mA t = 1s 3000 V~ ISOL Advantages M Mounting torque 1.5/13 Nm/lb.in. d Terminal connection torque 1.3/11.5 Nm/lb.in. z Low gate drive requirement Weight 30 g z High power density Applications: Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C unless otherwise specified) J power supplies Min. Typ. Max. z DC-DC Converters z BV V = 0V, I = 3mA 900 V Battery chargers DSS GS D z DC choppers V V = V , I = 8mA 3.0 5.0 V z GS(th) DS GS D Temperature & lighting controls I V = 20V, V = 0V 200 nA GSS GS DS I V = 0.8 V 100 A DSS DS DSS V = 0V T = 125C 2 mA GS J R V = 10V, I = 0.5 I , Note 1 25N90 330 m DS(on) GS D D25 26N90 300 m 2008 IXYS CORPORATION, All rights reserved DS97526F(12/08)IXFN25N90 IXFN26N90 Symbol Test Conditions Characteristic Values SOT-227B Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 18 28 S fs DS D DSS C 8.7 10.8 nF iss C V = 0V, V = 25V, f = 1MHz 800 1000 pF oss GS DS C 300 375 pF rss t Resistive Switching Times 60 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 35 ns r GS DS DSS D DSS t R = 1 (External) 130 ns d(off) G t 24 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 56 nC gs GS DS DSS D DSS Q 107 nC gd R 0.21 C/W thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 25N90 25 A S GS 26N90 26 A I Repetitive, pulse width limited by T 25N90 100 A SM JM 26N90 104 A V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = I , -di/dt = 100A/s F S Q 1.4 C RM V = 100V R I 10 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537