Not for New Designs V I R DSS D25 DS(on) TM IXFK 27N80 800 V 27 A 0.30 HiPerFET Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t IXFN 27N80 800 V 27 A 0.30 rr IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN V T = 25C to 150C 800 800 V DSS J V T = 25C to 150C R = 1 M 800 800 V DGR J GS G (TAB) D V Continuous 20 20 V S GS V Transient 30 30 V GSM miniBLOC, SOT-227 B (IXFN) I T = 25C, Chip capability 27N80 27 27 A E153432 D25 C S 25N80 25 25 A G I T = 25C, pulse width limited by T 27N80 108 108 A D DM C JM T = 25C 25N80 100 100 A C I 27N80 14 14 A AR G 25N80 13 13 A S E T = 25C3030mJ S D AR C S dv/dt I I , di/dt 100 A/ s, V V , 5 5 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 J G S = Source TAB = Drain Either Source terminal at miniBLOC can be used P T = 25C 500 520 W D C as Main or Kelvin Source T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T 1.6 mm (0.063 in) from case for 10 s 300 - C L International standard packages V 50/60 Hz, RMS t = 1 min - 2500 V~ JEDEC TO-264 AA, epoxy meet ISOL I 1 mA t = 1 s - 3000 V~ UL 94 V-0, flammability classification ISOL miniBLOC, with Aluminium nitride M Mounting torque 0.9/6 1.5/13 Nm/lb.in. d isolation Terminal connection torque - 1.5/13 Nm/lb.in. TM Low R HDMOS process DS (on) Rugged polysilicon gate cell structure Weight 10 30 g Unclamped Inductive Switching (UIS) rated Symbol Test Conditions Characteristic Values Low package inductance (T = 25C, unless otherwise specified) J Fast intrinsic Rectifier min. typ. max. Applications V V = 0 V, I = 3 mA 800 V DSS GS D V temperature coefficient 0.096 %/K DC-DC converters DSS Battery chargers V V = V , I = 8 mA 2 4.5 V GH(th) DS GS D Switched-mode and resonant-mode V temperature coefficient -0.214 %/K GS(th) power supplies DC choppers I V = 20 V , V = 0 200 nA GSS GS DC DS Temperature and lighting controls I V = 0.8 V T = 25C 500 A DSS DS DSS J V = 0 V T = 125C2mA GS J Advantages R V = 10 V, I = 0.5 I DS(on) GS D D25 Easy to mount Pulse test, t 300 s, 25N80 0.35 Space savings duty cycle d 2 % 27N80 0.30 High power density 95561D(6/02) 2002 IXYS All rights reservedIXFK 25N80 IXFK 27N80 IXFN 25N80 IXFN 27N80 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 16 28 S fs DS D D25 C 7930 8400 9740 pF iss C V = 0 V, V = 25 V, f = 1 MHz 630 712 790 pF oss GS DS C 146 192 240 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 80 ns r GS DS DSS D D25 t R = 1 (External), 75 ns Millimeter Inches d(off) G Dim. Min. Max. Min. Max. t 40 ns A 4.82 5.13 .190 .202 f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 320 350 400 nC g(on) b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q V = 10 V, V = 0.5 V , I = 0.5 I 38 46 56 nC gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 Q 120 130 142 nC gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-264 AA 0.25 K/W e 5.46 BSC .215 BSC thJC J 0.00 0.25 .000 .010 R TO-264 AA 0.15 K/W thCK K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 R miniBLOC, SOT-227 B 0.24 K/W thJC P 3.17 3.66 .125 .144 R miniBLOC, SOT-227 B 0.05 K/W Q 6.07 6.27 .239 .247 thCK Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Source-Drain Diode Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 27N80 27 A S GS 25N80 25 A I Repetitive 27N80 108 A SM pulse width limited by T 25N80 100 A JM V I = 100 A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % M4 screws (4x) supplied t I = I , -di/dt = 100 A/ s, V = 100 V T =25C 250 ns rr F S R J Dim. Millimeter Inches T =125C 400 ns J Min. Max. Min. Max. Q T =25C2 C RM J A 31.50 31.88 1.240 1.255 I 17 A B 7.80 8.20 0.307 0.323 RM C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025