TM HiPerFET V = 800 V IXFN 27N80Q DSS Power MOSFETs I = 27 A D25 R = 320 m Q-Class DS(on) Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr G Preliminary data sheet S S miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S V T = 25C to 150C 800 V DSS J G V T = 25C to 150C R = 1 M 800 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM S D I T = 25C27A D25 C I T = 25C, pulse width limited by T 108 A DM C JM I 27 A AR G = Gate D = Drain E T = 25C60mJ S = Source TAB = Drain AR C Either Source terminal at miniBLOC can be used E T = 25C 2.5 J AS C as Main or Kelvin Source dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150C, R = 2 J G P T = 25C 520 W D C Features T -55 ... +150 C J T 150 C International standard package JM Epoxy meet T -55 ... +150 C stg UL 94 V-0, flammability classification V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL miniBLOC with Aluminium nitride I 1 mA t = 1 s 3000 V~ ISOL isolation M Mounting torque 1.5/13 Nm/lb.in. IXYS advanced low Q process d g Terminal connection torque 1.5/13 Nm/lb.in. Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Weight 30 g rated Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25C, unless otherwise specified) J Battery chargers min. typ. max. Switched-mode and resonant-mode V V = 0 V, I = 250 A 800 V power supplies DSS GS D DC choppers V V = V , I = 4 mA 2.5 4.5 V GH(th) DS GS D Temperature and lighting controls I V = 20 V , V = 0 100 nA GSS GS DC DS Advantages I V = V T = 25C 100 A DSS DS DSS J V = 0 V T = 125C2mA GS J Easy to mount R V = 10 V, I = 0.5 I 0.32 Space savings DS(on) GS D D25 Note 1 High power density 2001 IXYS All rights reserved 98813 (04/01)IXFN 27N80Q Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 20 27 S fs DS D D25 C 7600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 750 pF oss GS DS C 120 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 28 ns M4 screws (4x) supplied r GS DS DSS D D25 t R = 1 (External), 50 ns Dim. Millimeter Inches d(off) G Min. Max. Min. Max. t 13 ns A 31.50 31.88 1.240 1.255 f B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 Q 170 nC g(on) D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 47nCE 4.09 4.29 0.161 0.169 gs GS DS DSS D D25 F 14.91 15.11 0.587 0.595 Q 65 nC G30.12 30.30 1.186 1.193 gd H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 R 0.24K/W thJC K 8.92 9.60 0.351 0.378 R 0.05 K/W L 0.76 0.84 0.030 0.033 thCK M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 27 A S GS I Repetitive 108 A SM pulse width limited by T JM V I = I , V = 0 V, 1.5 V SD F S GS Note 1 t I = I , -di/dt = 100 A/ s, V = 100 V 250 ns rr F S R Q 1.3 C RM I 8A RM Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025