TM HiPerFET Power V = 85V IXFN280N085 DSS MOSFETs Single Die I = 280A D25 MOSFET R 4.4m DS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings S V T = 25C to 150C85V DSS J G V T = 25C to 150C, R = 1M 85 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM S I T = 25C, Chip capability 280 A D D25 C I External Lead Current Limit 200 A L(RMS) G = Gate D = Drain I T = 25C, pulse width limited by T 1120 A DM C JM S = Source I T = 25C 200 A A C Either Source terminal at miniBLOC can be used as Main or Kelvin Source E T = 25C4J AS C dV/dt I I , V V , T 150C 5 V/ns S DM DD DSS J P T = 25C 700 W Features d C T -55 ... +150 C International standard package J miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C stg TM Low R HDMOS process DS(on) V 50/60 Hz, RMS t = 1min 2500 V~ Rugged polysilicon gate cell structure ISOL I 1mA t = 1s 3000 V~ ISOL Avalanche rated M Mounting torque 1.5/13 Nm/lb.in. Guaranteed FBSOA d Terminal connection torque 1.3/11.5 Nm/lb.in. Low package inductance Weight 30 g Fast intrinsic Rectifier Advantages Easy to mount Space savings Symbol Test Conditions Characteristic Values High power density (T = 25C, unless otherwise specified) J Min. Typ. Max. Applications BV V = 0V, I = 3mA 85 V DSS GS D DC-DC converters V V = V , I = 8mA 2.0 4.0 V Battery chargers GS(th) DS GS D Switched-mode and resonant-mode I V = 20V, V = 0V 200 nA GSS GS DS power supplies I V = V 100 A DSS DS DSS DC choppers V = 0V T = 125C 2 mA GS J Temperature and lighting controls R V = 10V, I = 100A, Note 1 4.4 m DS(on) GS D DS98747B(12/08) 2008 IXYS Corporation, All rights reservedIXFN280N085 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 100 S fs DS D C 19 nF iss C V = 0V, V = 25V, f = 1MHz 6.4 nF oss GS DS C 3.2 nF rss t 40 ns d(on) Resistive Switching Times t 150 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 112 ns d(off) R = 1 (External) G t 60 ns f M4 screws (4x) supplied Q 580 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 100A 77 nC gs GS DS DSS D A 31.50 31.88 1.240 1.255 Q 280 nC B 7.80 8.20 0.307 0.323 gd C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 R 0.18 C/W thJC E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 R 0.05 C/W thCS G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Source-Drain Diode Q 26.54 26.90 1.045 1.059 Symbol Test Conditions Characteristic Values R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 (T = 25C, unless otherwise specified) Min. Typ. Max. J T 24.59 25.07 0.968 0.987 I V = 0V 280 A U -0.05 0.1 -0.002 0.004 S GS I Repetitive, pulse width limited by T 1120 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 200 ns rr I = 50A, -di/dt = 100A/s, V = 50V Q 0.76 C F R RM I 8.00 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537