TM TM Polar HiPerFET V = 100V IXFN300N10P DSS Power MOSFET I = 295A D25 R 5.5m DS(on) N-Channel Enhancement Mode t 200ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 100 V DSS J miniBLOC E153432 V T = 25 C to 175 C, R = 1M 100 V DGR J GS S V Continuous 20 V GSS G V Transient 30 V GSM I T = 25 C 295 A D25 C I External Lead Current Limit 200 A S LRMS I T = 25 C, Pulse Width Limited by T 900 A DM C JM D I T = 25 C 100 A A C G = Gate D = Drain E T = 25 C3J AS C S = Source dv/dt I I , V V ,T 175 C 20 V/ns S DM DD DSS J Either Source terminal at miniBLOC can be used as Main or Kelvin Source P T = 25 C 1070 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C L miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1min 2500 V~ Isolation ISOL Low R and Q I 1mA t = 1s 3000 V~ DS(on) G ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in d Low Package Inductance Terminal Connection Torque 1.3/11.5 Nm/lb.in Fast Intrinsic Rectifier Weight 30 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J DC-DC Coverters BV V = 0V, I = 3mA 100 V DSS GS D Battery Chargers V V = V , I = 8mA 2.5 5.0 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 20V, V = 0V 200 nA GSS GS DS DC Choppers AC and DC Motor Drives I V = V , V = 0V 25A DSS DS DSS GS Uninterrupted Power Supplies T = 150C 1.5 mA J High Speed Power Switching R V = 10V, I = 50A, Note 1 5.5 m Applications DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100016A(02/14) IXFN300N10P Symbol Test Conditions Characteristic Values SOT-227B Outline (IXFN) (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 92 S fs DS D C 23 nF iss C V = 0V, V = 25V, f = 1MHz 6100 pF oss GS DS C 417 pF rss t 36 ns d(on) Resistive Switching Times t 35 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 56 ns d(off) R = 1 (External) G t 25 ns f Q 279 nC g(on) Q V = 10V, V = 0.5 V , I = 150A 84 nC gs GS DS DSS D Q 107 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 300 A S GS I Repetitive, Pulse Width Limited by T 1000 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 200 ns I = 150A, -di/dt = 100A/ s rr F Q 0.71 C RM V = 50V R I 10 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537