TM TM Polar HiperFET V = 1200V IXFN30N120P DSS Power MOSFET I = 30A D25 R 350m D DS(on) t 300ns rr G N-Channel Enhancement Mode S Fast Intrinsic Rectifier S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 30 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 75 A S = Source DM C JM I T = 25 C 15 A A C Either Source Terminal S can be used as E T = 25 C2J the Source Terminal or the Kelvin Source AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 20 V/ns S DM DD DSS J P T = 25 C 890 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ ISOL Isolation M Mounting Torque for Base Plate 1.5/13 Nm/lb.in Low Package Inductance d Terminal Connection Torque 1.3/11.5 Nm/Ib.in Fast Intrinsic Rectifier Low R and Q Weight 30 g DS(on) G Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 1200 V DSS GS D DC-DC Converters V V = V , I = 1mA 3.5 6.5 V Battery Chargers GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 300 nA GSS GS DS Power Supplies AC Motor Control I V = V , V = 0V 50 A DSS DS DSS GS High Speed Power Switching T = 125C 5 mA J Appliccation R V = 10V, I = 15A, Note 1 350 m DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS99884B(8/17) IXFN30N120P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 15A, Note 1 13 22 S fs DS D C 19 nF iss C V = 0V, V = 25V, f = 1MHz 960 pF oss GS DS C 25 pF rss R Gate Input Resistance 1.7 Gi t 57 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 15A GS DS DSS D t 95 ns (M4 screws (4x) supplied) d(off) R = 1 (External) G t 56 ns f Q 310 nC g(on) Q V = 10V, V = 0.5 V , I = 15A 104 nC gs GS DS DSS D Q 137 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 120 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 15A, -di/dt = 100A/ s F Q 1.6 C RM V = 100V, V = 0V R GS I 14.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537