TM V = 1000V IXFN32N100P Polar Power MOSFET DSS I = 27A TM HiPerFET D25 R 320m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S V T = 25C to 150C 1000 V DSS J G V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM S I T = 25C27A D25 C D I T = 25C, pulse width limited by T 75 A DM C JM G = Gate D = Drain S = Source I T = 25C16A AR C E T = 25C 1.5 J Either Source terminal S can be used as the AS C Source terminal or the Kelvin Source (gate dV/dt I I , V V ,T 150C 20 V/ns return) terminal. S DM DD DSS J P T = 25C 690 W D C Features T -55 ... +150 C J z International standard package T 150 C JM z Encapsulating epoxy meets T -55 ... +150 C stg UL 94 V-0, flammability classification z miniBLOC with Aluminium nitride T 1.6mm (0.062 in.) from case for 10s 300 C L isolation z Fast recovery diode V 50/60 Hz, RMS t = 1min 2500 V~ ISOL z Unclamped Inductive Switching (UIS) I 1mA t = 1s 3000 V~ ISOL rated z M Mounting torque 1.5/13 Nm/lb.in. Low package inductance d Terminal connection torque 1.3/11.5 Nm/lb.in. - easy to drive and to protect Weight 30 g Advantages z Easy to mount z Space savings Symbol Test Conditions Characteristic Values z High power density (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 3mA 1000 V DSS GS D Applications V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z Switched-mode and resonant-mode I V = 30V, V = 0V 200 nA GSS GS DS power supplies z DC-DC Converters I V = V 50 A DSS DS DSS z Laser Drivers V = 0V T = 125C 2.5 mA GS J z AC and DC motor controls R V = 10V, I = 16A, Note 1 320 m z DS(on) GS D Robotics and servo controls 2008 IXYS CORPORATION, All rights reserved DS99880A(4/08) IXFN32N100P Symbol Test Conditions Characteristic Values SOT-227B Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 16A, Note 1 13 21 S fs DS D C 14.2 nF iss C V = 0V, V = 25V, f = 1MHz 815 pF oss GS DS C 60 pF rss R Gate input resistance 1.50 Gi t 50 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 16A GS DS DSS D t 76 ns d(off) R = 1 (External) G t 43 ns f Q 225 nC g(on) Q V = 10V, V = 0.5 V , I = 16A 85 nC gs GS DS DSS D Q 94 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, pulse width limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 16A, -di/dt = 100A/s F Q 2.2 C RM V = 100V R I 15 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537