Preliminary Technical Information TM HiperFET V = 1000V IXFN32N100Q3 DSS Power MOSFET I = 28A D25 Q3-Class R 320m DS(on) t 300ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 28 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 96 A S = Source DM C JM I T = 25C 32 A A C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source E T = 25C2J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25C 780 W D C Features T -55 ... +150 C J T 150 C JM z International Standard Package T -55 ... +150 C stg z Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ z ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ Isolation ISOL z Low Package Inductance M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z Fast Intrinsic Rectifier Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Low R and Q DS(on) G Weight 30 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 1000 V DSS GS D z DC-DC Converters z V V = V , I = 8mA 3.5 6.5 V Battery Chargers GS(th) DS GS D z Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies z DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS z Temperature and Lighting Controls T = 125C 2 mA J R V = 10V, I = 16A, Note 1 320 m DS(on) GS D 2012 IXYS CORPORATION, All Rights Reserved DS100367A(10/12) IXFN32N100Q3 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 16A, Note 1 20 32 S fs DS D C 10.9 nF iss C V = 0V, V = 25V, f = 1MHz 745 pF oss GS DS C 67 pF rss R Gate Input Resistance 0.20 Gi t 45 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 16A GS DS DSS D t 54 ns (M4 screws (4x) supplied) d(off) R = 1 (External) G t 12 ns f Q 195 nC g(on) Q V = 10V, V = 0.5 V , I = 16A 60 nC gs GS DS DSS D Q 78 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, Pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 16A, -di/dt = 100A/s F Q 1.2 C RM V = 100V, V = 0V R GS I 12.3 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537