Advanced Technical Data TM IXFN 32N120 V = 1200V HiPerFET DSS I = 32A Power MOSFETs D25 R = 0.35 DS(on) N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low t rr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C 1200 V DSS J S V T = 25C to 150C R = 1 M 1200 V DGR J GS G V Continuous 30 V GS V Transient 40 V GSM S I T = 25C, Chip capability 32 A D25 C D I T = 25C, pulse width limited by T 128 A DM C JM I T = 25C32A AR C G = Gate D = Drain E T = 25C64mJ AR C S = Source TAB = Drain E T = 25C4J Either Source terminal at miniBLOC can be used AS C as Main or Kelvin Source dv/dt I I , di/dt 100 A/s, V V , 15 V/ns S DM DD DSS T 150C, R = 2 J G Features P T = 25C 780 W D C International standard package T -55 ... +150 C J miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C TM stg Low R HDMOS process DS (on) Rugged polysilicon gate cell V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL structure I 1 mA t = 1 s 3000 V~ ISOL Unclamped Inductive Switching (UIS) M Mounting torque 1.5/13 Nm/lb.in. d rated Terminal connection torque 1.5/13 Nm/lb.in. Low package inductance Weight 30 g Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25C, unless otherwise specified) J min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 3 mA 1200 V DSS GS D power supplies V V = V , I = 8 mA 2.5 5.0 V GS(th) DS GS D DC choppers I V = 30 V , V = 0 200 nA GSS GS(th) DC DS Temperature and lighting controls I V = V T = 25C50 A DSS DS DSS J V = 0 V T = 125C3mA GS J Advantages R V = 10 V, I = 0.5 I 0.35 DS(on) GS D D25 Easy to mount Pulse test, t 300 s, duty cycle d 2 % Space savings High power density 2003 IXYS All rights reserved DS98968B(10/03)IXFN 32N120 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 20 V I = 0.5 I , pulse test 28 52 S fs DS D D25 C 15900 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1000 pF oss GS DS C 260 pF rss t 36 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 42 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 98 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 22 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 400 nC g(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 188 nC gd G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.16 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 32 A S GS I Repetitive 128 A SM pulse width limited by T JM V I = I , V = 0 V, 1.3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s, V = 100 V 180 300 ns rr F R Q 1.4 C RM I 8A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343