TM TM Polar HiPerFET IXFN32N120P V = 1200V DSS I = 32A Power MOSFET D25 R 310m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 Symbol Test Conditions Maximum Ratings S G V T = 25C to 150C 1200 V DSS J V T = 25C to 150C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM S I T = 25C 32 A D25 C D I T = 25C, Pulse Width Limited by T 100 A DM C JM I T = 25C 16 A G = Gate D = Drain A C S = Source E T = 25C 2 J AS C Either Source Terminal S can be used as dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. P T = 25C 1000 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg z International Standard Package z T 1.6mm (0.062 in.) from Case for 10s 300 C miniBLOC, with Aluminium Nitride L T Plastic Body for 10s 260 C Isolation SOLD z Isolation Voltage 2500 V~ V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL z High Current Handling Capability I 1mA t = 1 second 3000 V~ ISOL z Fast Intrinsic Diode z M Mounting Torque 1.5/13 Nm/lb.in. d Avalanche Rated z Terminal Connection Torque 1.3/11.5 Nm/lb.in. TM Low R HDMOS Process DS(on) Weight 30 g Advantages z Easy to Mount z Symbol Test Conditions Characteristic Values Space Savings z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J BV V = 0V, I = 3mA 1200 V DSS GS D Applications V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z High Voltage Switch-Mode and I V = 30V, V = 0V 300 nA GSS GS DS Resonant-ModePower Supplies I V = V , V = 0V 50 A z DSS DS DSS GS High Voltage Pulse Power T = 125C 5 mA Applications J z High Voltage Discharge Circuits in R V = 10V, I = 0.5 I , Note 1 310 m DS(on) GS D D25 Lasers Pulsers, Spark Igniters, RF Generators z High Voltage DC-DC Converters z High Voltage DC-AC Inverters 2010 IXYS Corporation, All Rights Reserved DS99718H(03/10) IXFN32N120P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 17 28 S fs DS D D25 C 21 nF iss C V = 0V, V = 25V, f = 1MHz 1100 pF oss GS DS C 77 pF rss R Gate input resistance 0.84 Gi t 70 ns d(on) Resistive Switching Times t 62 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 88 ns d(off) R = 1 (External) G t 58 ns f (M4 screws (4x) supplied) Q 360 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 130 nC gs GS DS DSS D D25 Q 160 nC gd R 0.125 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, Pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 20A, -di/dt = 100A/s F Q 1.9 C RM V = 100V, V = 0V R GS I 15 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537