TM IXFN32N80P V = 800 V PolarHV HiPerFET DSS I = 25 A D25 Power MOSFET R 270 m DS(on) t 250 ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C 800 V DSS J S G V T = 25C to 150C R = 1 M 800 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM S I T = 25C29A D25 C D I T = 25C, pulse width limited by T 250 A DM C JM I T = 25C30A AR C G = Gate D = Drain S = Source E T = 25C 100 mJ AR C E T = 25C5J Either Source terminal S can be used as the AS C Source terminal or the Kelvin Source (gate return) terminal. dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 2 J G P T = 25C 625 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International standard package T 1.6 mm (0.062 in.) from case for 10 s 300 C L Encapsulating epoxy meets V 50/60 Hz, RMS t = 1 min 2500 V~ UL 94 V-0, flammability classification ISOL miniBLOC with Aluminium nitride I 1 mA t = 1 s 3000 V~ ISOL isolation l M Mounting torque 1.5 / 13 Nm/lb.in. Fast recovery diode d l Terminal connection torque 1.5 / 13 Nm/lb.in. Unclamped Inductive Switching (UIS) rated Weight 30 g l Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values Advantages (T = 25C, unless otherwise specified) Min. Typ. Max. J l Easy to mount BV V = 0 V, I = 3 mA 800 V DSS GS D l Space savings l High power density V V = V , I = 8 mA 3.0 5.0 V GS(th) DS GS D I V = 30 V, V = 0 V 200 nA GSS GS DS I V = V 25 A DSS DS DSS V = 0 V T = 125C2mA GS J R V = 10 V, I = 16A, Note 1 270 m DS(on) GS D DS99605E(08/06) 2006 IXYS All rights reserved IXFN32N80P Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) SOT-227B Outline J Min. Typ. Max. g V = 20 V I = 16A, Note 1 20 38 S fs DS D C 8820 nF iss C V = 0 V, V = 25 V, f = 1 MHz 660 pF oss GS DS C 22 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 16A 29 ns r GS DS DSS D t R = 2 (External) 85 ns d(off) G t 26 ns f Q 150 nC g(on) Q V = 10 V, V = 0.5 V , I = 16 A 39 nC gs GS DS DSS D Q 44 nC gd R 0.2 C/W thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 60 A S GS I Repetitive 150 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/s 250 ns rr F Q V = 100V 0.8 C RM R I 8.0 A RM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537