TM GigaMOS Trench V = 100V IXFN360N10T DSS TM HiperFET I = 360A D25 R 2.6m Power MOSFET DS(on) t 130ns rr N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Rectifier E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 100 V DSS J V T = 25C to 175C, R = 1M 100 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25C (Chip Capability) 360 A D25 C G = Gate D = Drain I Lead Current Limit, RMS 200 A LRMS S = Source I T = 25C, Pulse Width Limited by T 900 A DM C JM I T = 25C 100 A A C E T = 25C3J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source P T = 25C 830 W D C ( Gate Return ) Terminal. dV/dt I I , V V , T 175C 20 V/ns S DM DD DSS J T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C z stg International Standard Package z T 1.6mm (0.062 in.) from Case for 10s 300 C 175C Operating Temperature L z T Plastic Body for 10s 260 C High Current Handling Capability SOLD z Avalanche Rated V 50/60 Hz, RMS t = 1 Minute 2500 V~ ISOL z Fast Intrinsic Rectifier I 1mA t = 1 Second 3000 V~ ISOL z Low R DS(on) M Mounting Torque 1.5/13 Nm/lb.in. d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Advantages Weight 30 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ . Max. J BV V = 0V, I = 1mA 100 V z DSS GS D DC-DC Converters z Battery Chargers V V = V , I = 3mA 2.5 4.5 V GS(th) DS GS D z Switch-Mode and Resonant-Mode I V = 20V, V = 0V 200 nA GSS GS DS Power Supplies z DC Choppers I V = V , V = 0V 25 A DSS DS DSS GS z AC Motor Drives T = 150C 2.5 mA J z Uninterruptible Power Supplies R V = 10V, I = 100A, Note 1 2.6 m z DS(on) GS D High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS100088A(10/09) IXFN360N10T Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 180 S fs DS D C 33 nF iss C V = 0V, V = 25V, f = 1MHz 3160 pF oss GS DS C 400 pF rss R Gate Input Resistance 1.20 Gi t 47 ns d(on) Resistive Switching Times t 100 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 80 ns d(off) R = 1 (External) G t 160 ns f (M4 screws (4x) supplied) Q 525 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 145 nC gs GS DS DSS D D25 Q 165 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 360 A S GS I Repetitive, Pulse Width Limited by T 1440 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 130 ns rr I = 100A, V = 0V F GS I 6.60 A RM -di/dt = 100A/s Q 0.33 C RM V = 50V R Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537