Advance Technical Information TM HiperFET V = 1000V IXFN44N100Q3 DSS Power MOSFET I = 38A D25 Q3-Class R 220m DS(on) t 300ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 38 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 110 A S = Source DM C JM I T = 25C 44 A A C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source E T = 25C4J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25C 960 W D C Features T -55 ... +150 C J T 150 C JM z International Standard Package T -55 ... +150 C stg z Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ z miniBLOC with Aluminum Nitride ISOL I 1mA, t = 1s 3000 V~ Isolation ISOL z Low Package Inductance M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z Fast Intrinsic Rectifier Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Low R and Q DS(on) G Weight 30 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 1000 V DSS GS D z DC-DC Converters z V V = V , I = 8mA 3.5 6.5 V Battery Chargers GS(th) DS GS D z Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies z DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS z Temperature and Lighting Controls T = 125C 3 mA J R V = 10V, I = 22A, Note 1 220 m DS(on) GS D 2011 IXYS CORPORATION, All Rights Reserved DS100306(03/11) IXFN44N100Q3 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 22A, Note 1 26 43 S fs DS D C 13.6 nF iss C V = 0V, V = 25V, f = 1MHz 1046 pF oss GS DS C 86 pF rss R Gate Input Resistance 0.12 Gi t 48 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 22A GS DS DSS D t 66 ns (M4 screws (4x) supplied) d(off) R = 0.5 (External) G t 28 ns f Q 264 nC g(on) Q V = 10V, V = 0.5 V , I = 22A 76 nC gs GS DS DSS D Q 110 nC gd R 0.13 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, Pulse Width Limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 22A, -di/dt = 100A/s F Q 2.1 C RM V = 100V, V = 0V R GS I 16.2 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537