IXFN44N80 V = 800V Power MOSFET DSS TM I = 44A HiPerFET D25 R 0.165 DS(on) Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings S V T = 25C to 150C 800 V DSS J G V T = 25C to 150C, R = 1M 800 V DGR J GS V Continuous 20 V GSS V Transient 30 V S GSM D I T = 25C, Chip capability 44 A D25 C I T = 25C, pulse width limited by T 176 A DM C JM G = Gate D = Drain I T = 25C44A AR C S = Source E T = 25C64mJ Either Source terminal at miniBLOC can be used AR C as Main or Kelvin Source E T = 25C4J AS C Features dV/dt I I , di/dt 100 A/s, V V , 5 V/ns S DM DD DSS International standard packages T 150C, R = 1 J G miniBLOC, with Aluminium nitride P T = 25C 700 W D C isolation TM T -55 ... +150 C Low R HDMOS process J DS (on) T 150 C Rugged polysilicon gate cell JM structure T -55 ... +150 C stg Unclamped Inductive Switching V 50/60 Hz, RMS t = 1min 2500 V~ ISOL (UIS) rated I 1mA t = 1s 3000 V~ ISOL Low package inductance M Mounting torque 1.5/13 Nm/lb.in. d Fast intrinsic Rectifier Terminal connection torque 1.3/11.5 Nm/lb.in. Weight 30 g Applications DC-DC converters Battery chargers Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25C, unless otherwise specified) Min. Typ. Max. J power supplies BV V = 0V, I = 3mA 800 V DSS GS D DC choppers V V = V , I = 8mA 2.5 4.5 V GS(th) DS GS D Temperature and lighting controls I V = 20V, V = 0V 200 nA GSS GS DS I V = V 100 A Advantages DSS DS DSS V = 0V T = 125C 2 mA Easy to mount GS J Space savings R V = 10V, I = 0.5 I Note 1 0.165 DS(on) GS D D25, 2007 IXYS CORPORATION, All rights reserved DS98594E(08/07)IXFN44N80 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 15V, I = 0.5 I , Note 1 32 50 S fs DS D D25 C 10000 pF iss C V = 0V, V = 25V, f = 1MHz 1300 pF oss GS DS C 330 pF rss t Resistive Switching Times 35 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 48 ns r GS DS DSS D D25 t R = 1 (External) 100 ns d(off) G M4 screws (4x) supplied t 24 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 380 nC G(on) A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q V = 10V, V = 0.5 V , I = 0.5 I 70 nC GS GS DS DSS D D25 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q 170 nC GD E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 R 0.18 C/W thJC G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.05 C/W thCK J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 Source-Drain Diode N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 Symbol Test Conditions Characteristic Values P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 (T = 25C, unless otherwise specified) Min. Typ. Max. J R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 I V = 0V 44 A S GS T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I Repetitive, pulse width limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 250 ns rr Q I = 22A, -di/dt = 100A/s, V = 100V 1.2 C RM F R I 8 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537