Q3-Class V = 800V IXFN44N80Q3 DSS TM HiperFET I = 37A D25 Power MOSFET R 190m DS(on) t 300ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 800 V DSS J V T = 25 C to 150 C, R = 1M 800 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 37 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 130 A S = Source DM C JM I T = 25 C 44 A A C Either Source Terminal S can be used as E T = 25 C 3.5 J AS C the Source Terminal or the Kelvin Source (Gate Return) Terminal. dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J P T = 25 C 780 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ Isolation ISOL Avalanche Rated M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d Low Package Inductance Terminal Connection Torque 1.3/11.5 Nm/lb.in. Fast Intrinsic Rectifier Weight 30 g Low R and Q DS(on) G Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 800 V DSS GS D V V = V , I = 8mA 3.5 6.5 V DC-DC Converters GS(th) DS GS D Battery Chargers I V = 30V, V = 0V 200 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS DC Choppers T = 125 C 2.5 mA J Temperature and Lighting Controls R V = 10V, I = 22A, Note 1 190 m DS(on) GS D DS100360C(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFN44N80Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 22A, Note 1 22 37 S fs DS D C 10950 pF iss C V = 0V, V = 25V, f = 1MHz 957 pF oss GS DS C 95 pF rss R Gate Input Resistance 0.20 Gi t 45 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 22A GS DS DSS D t 63 ns d(off) R = 1 (External) G t 20 ns f Q 185 nC g(on) Q V = 10V, V = 0.5 V , I = 22A 67 nC gs GS DS DSS D Q 83 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, Pulse Width Limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 22A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V, V = 0V I R GS 13.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537