TM TrenchT2 V = 75V IXFN520N075T2 DSS TM TM GigaMOS HiperFET I = 480A D25 Power MOSFET R 1.9m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C 75 V DSS J V T = 25 C to 175 C, R = 1M 75 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25 C (Chip Capability) 480 A D25 C I External Lead Current Limit 200 A L(RMS) G = Gate D = Drain S = Source I T = 25 C, Pulse Width Limited by T 1500 A DM C JM I T = 25 C 200 A A C Either Source Terminal S can be used as E T = 25 C3J AS C the Source Terminal or the Kelvin Source P T = 25 C 940 W ( Gate Return ) Terminal. D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg V 50/60 Hz, RMS t = 1 minute 2500 V~ International Standard Package ISOL miniBLOC, with Aluminium Nitride I 1mA t = 1 second 3000 V~ ISOL Isolation M Mounting Torque 1.5/13 Nm/lb.in. d 175C Operating Temperature Terminal Connection Torque 1.3/11.5 Nm/lb.in. Isolation Voltage 2500 V~ Weight 30 g High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 3mA 75 V DSS GS D High Power Density V V = V , I = 8mA 2.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA Applications GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS DC-DC Converters and Off-Line UPS T = 150C 2 mA J Primary-Side Switch R V = 10V, I = 100A, Note 1 1.5 1.9 m High Speed Power Switching DS(on) GS D Applications 2018 IXYS CORPORATION, All Rights Reserved DS100193B(4/18) IXFN520N075T2 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 65 105 S fs DS D C 41 nF iss C V = 0V, V = 25V, f = 1MHz 4150 pF oss GS DS C 530 pF rss R Gate Input Resistance 1.36 Gi t 48 ns d(on) Resistive Switching Times t 36 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 80 ns d(off) R = 1 (External) G t 35 ns f (M4 screws (4x) supplied) Q 545 nC g(on) Q V = 10V, V = 0.5 V , I = 260A 177 nC gs GS DS DSS D Q 135 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 520 A S GS I Repetitive, Pulse Width Limited by T 1600 A SM JM V I = 100A, V = 0V, Note 1 1.25 V SD F GS t 150 ns rr I = 150A, V = 0V F GS I 7 A RM -di/dt = 100A/ s Q 357 nC RM V = 37.5V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537