Advance Technical Information TM HiPerRF IXFN 55N50F V = 500 V DSS I = 55 A Power MOSFETs D25 F-Class: MegaHertz Switching R = 85 m DS(on) D N-Channel Enhancement Mode t 250 ns rr Avalanche Rated, Low Q Low Intrinsic R G g, g High dV/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 V T = 25C to 150C 500 V DSS J S V T = 25C to 150C R = 1 M 500 V DGR J GS G V Continuous 20 V GS V Transient 30V GSM S I T = 25C55A D25 C D I T = 25C, pulse width limited by T 220 A DM C JM I T = 25C55A AR C G = Gate D = Drain E T = 25C60mJ AR C S = Source E T = 25C3.0 J AS C Either Source terminal at miniBLOC can be used as Main or Kelvin Source dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS T 150C, R = 2 J G P T = 25C 600 W D C T -55 ... +150 C Features J RF capable Mosfets T 150 C JM Rugged polysilicon gate cell structure T -55 ... +150 C stg Double metal process for low gate resistance T 1.6 mm (0.63 in) from case for 10 s - C J Unclamped Inductive Switching (UIS) V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL rated I 1 mA t = 1 s 3000 V~ ISOL Low package inductance - easy to drive and to protect M Mounting torque 1.5/13Nm/lb.in. d Fast intrinsic rectifier Terminal connection torque 1.5/13Nm/lb.in. Weight 30g Applications DC-DC converters Switched-mode and resonant-mode Symbol Test Conditions Characteristic Values power supplies, >500kHz switching (T = 25C, unless otherwise specified) DC choppers J min. typ. max. Pulse generation Laser drivers V V = 0 V, I = 1 mA 500 V DSS GS D V V = V , I = 8 mA 3.0 5.5 V GH(th) DS GS D Advantages Easy to mount I V = 20 V , V = 0 200 nA GSS GS DC DS Space savings I V = V T = 25C 100 A DSS DS DSS J High power density V = 0 V T = 125C3mA GS J R V = 10 V, I = 0.5 I DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % 85 m 2001 IXYS All rights reserved 98854 (8/01)IXFN 55N50F Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 22 33 S fs DS D D25 C 6700 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1250 pF oss GS DS C 330 pF rss t 24 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 20 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 45 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 9.6 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 195 nC g(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 95 nC gd G30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.21 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 55 A S GS I Repetitive 220 A SM pulse width limited by T JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 50A, -di/dt = 100 A/ s, V = 100 V 250 ns rr F R Q 1.6 C RM I 13 A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025