TM TM Polar HiPerFET V = 900V IXFN56N90P DSS Power MOSFET I = 56A D25 R 145m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 900 V G DSS J V T = 25 C to 150 C, R = 1M 900 V DGR J GS V Continuous 30 V GSS V Transient 40 V S GSM D I T = 25 C56A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 168 A DM C JM S = Source I T = 25 C28A A C Either Source terminal S can be used as the E T = 25 C2J AS C Source terminal or the Kelvin Source (gate return) terminal. dv/dt I I , V V ,T 150 C 20 V/ns S DM DD DSS J P T = 25 C 1000 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC, with Aluminium Nitride T 1.6mm (0.062 in.) from case for 10s 300 C L Isolation Low R and Q V 50/60 Hz, RMS t = 1min 2500 V~ DS(on) G ISOL Avalanche Rated I 1mA t = 1s 3000 V~ ISOL Low Package Inductance M Mounting Torque 1.5/13 Nm/lb.in. Fast Intrinsic Rectifier d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 900 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D Power Supplies DC-DC Converters I V = 30V, V = 0V 200 nA GSS GS DS Laser Drivers I V = V , V = 0V 50 A AC and DC Motor Drives DSS DS DSS GS T = 125C 5 mA Robotics and Servo Controls J R V = 10V, I = 0.5 I , Note 1 145 m DS(on) GS D D25 2014 IXYS CORPORATION, All Rights Reserved DS100066B(01/14) IXFN56N90P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 27 44 S fs DS D D25 R Gate Input Resistance 0.85 Gi C 23 nF iss C V = 0V, V = 25V, f = 1MHz 1385 pF oss GS DS C 106 pF rss t 74 ns d(on) Resistive Switching Times t 80 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 93 ns d(off) R = 1 (External) G t 38 ns f (M4 screws (4x) supplied) Q 375 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 80 nC gs GS DS DSS D D25 Q 145 nC gd R 0.125 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 56 A S GS I Repetitive, Pulse Width Limited by T 224 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns I = 0.5 I , -di/dt = 100A/ s rr F D25 Q 1.8 C RM V = 100V, V = 0V R GS I 15.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537