TM TM Polar HiperFET V = 800V IXFN60N80P DSS Power MOSFET I = 53A D25 R 140m D DS(on) t 250ns rr G N-Channel Enhancement Mode S Fast Intrinsic Rectifier S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 800 V DSS J V T = 25 C to 150 C, R = 1M 800 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 53 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 150 A S = Source DM C JM I T = 25 C 30 A A C Either Source Terminal S can be used as E T = 25 C5J the Source Terminal or the Kelvin Source AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 20 V/ns S DM DD DSS J P T = 25 C 1040 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ ISOL Isolation M Mounting Torque for Base Plate 1.5/13 Nm/lb.in Low Package Inductance d Terminal Connection Torque 1.3/11.5 Nm/Ib.in Fast Intrinsic Rectifier Low R and Q Weight 30 g DS(on) G Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 800 V DSS GS D DC-DC Converters V V = V , I = 8mA 3.0 5.0 V Battery Chargers GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies AC Motor Control I V = V , V = 0V 25 A DSS DS DSS GS High Speed Power Switching T = 125C 3 mA J Appliccation R V = 10V, I = 30A, Note 1 140 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS99562H(10/18) IXFN60N80P Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 30A, Note 1 35 67 S fs DS D C 18 nF iss C V = 0V, V = 25V, f = 1MHz 1200 pF oss GS DS C 44 pF rss t 36 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I = 30A GS DS DSS D t 110 ns d(off) R = 1 (External) G t 26 ns f Q 250 nC g(on) Q V = 10V, V = 0.5 V , I = 30A 90 nC gs GS DS DSS D Q 78 nC gd R 0.12 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 60 A S GS I Repetitive, Pulse Width Limited by T 150 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 25A, -di/dt = 100A/ s F Q 0.6 C RM V = 100V, V = 0V R GS I 6.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537