TM V = 600 V IXFN 64N60P PolarHV HiPerFET DSS I =50 A D25 Power MOSFET R 96 m DS(on) t 200 ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM G = Gate D = Drain I T = 25C 50 A S = Source D25 C Either Source terminal S can be used as the I T = 25C, pulse width limited by T 150 A DM C JM Source terminal or the Kelvin Source (gate I T = 25C 64 A return) terminal. AR C E T = 25C 80 mJ AR C E T = 25C 3.5 J AS C Features dv/dt I I , di/dt 100 A/s, V V , 20 V/ns S DM DD DSS International standard package T 150C, R = 2 J G Encapsulating epoxy meets UL 94 V-0, flammability classification P T = 25C 700 W D C miniBLOC with Aluminium nitride T -55 ... +150 C J isolation T 150 C TM JM Low R HDMOS process DS (on) T -55 ... +150 C stg Rugged polysilicon gate cell structure T 1.6 mm (0.062 in.) from case for 10 s 300 C L Unclamped Inductive Switching (UIS) rated V 50/60 Hz, RMS, 1 minute 2500 V~ ISOL Low package inductance M Mounting torque 1.13/10 Nm/lb.in. d Fast intrinsic Rectifier Terminal torque 1.13/10 Nm/lb.in. Applications Weight 30 g DC-DC converters Synchronous rectification Battery chargers Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25 C, unless otherwise specified) Min. Typ. Max. power supplies J DC choppers BV V = 0 V, I = 3 mA 600 V DSS GS D Temperature and lighting controls V V = V , I = 8 mA 3.0 5.0 V Low voltage relays GS(th) DS GS D I V = 30 V , V = 0 200 nA Advantages GSS GS DC DS Easy to mount I V = V 25 A DSS DS DSS Space savings V = 0 V T = 125 C 1000 A GS J High power density R V = 10 V, I = 0.5 I , Note 1 96 m DS(on) GS D D25 DS99443E(01/06) 2006 IXYS All rights reserved IXFN 64N60P Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , Note 1 40 63 S fs DS D D25 C 12 nF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 80 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 23 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External) 79 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 24 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 200 nC g(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 68 nC gd G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.18 C/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 C/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Source-Drain Diode Characteristic Values Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 (T = 25 C, unless otherwise specified) J S 4.72 4.85 0.186 0.191 Symbol Test Conditions Min. Typ. Max. T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I V = 0 V 64 A S GS I Repetitive 150 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/s 200 ns rr F Q V = 100V 0.6 C RM R I 6.0 A RM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2