TM HiPerFET V = 600 V IXFN 70N60Q2 DSS Power MOSFET I = 70 A D25 R = 80 m DS(on) N-Channel Enhancement Mode t 250 ns Avalanche Rated, Low Q , Low Intrinsic R rr g g High dV/dt, Low t rr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS S V Continuous 30 V GS D V Transient 40 V GSM I T = 25C70A D25 C I T = 25C, pulse width limited by T 280 A G = Gate D = Drain DM C JM I T = 25C70A S = Source AR C Either Source terminal at miniBLOC can be used E T = 25C60mJ AR C as Main or Kelvin Source E T = 25C 5.0 J AS C dv/dt I I , di/dt 100 A/s, V V 20 V/ns S DM DD DSS T 150C, R = 2 Features J G Double metal process for low P T = 25C 890 W D C gate resistance T -55 ... +150 C J miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C stg Unclamped Inductive Switching (UIS) V 50/60 Hz, RMS, t = 1 minute 2500 V rated ISOL M Mounting torque 1.5/13 Nm/lb.in. Low package inductance d Terminal connection torque 1.5/13 Nm/lb.in. Fast intrinsic Rectifier Weight 30 g Applications DC-DC converters Switched-mode and resonant-mode Symbol Test Conditions Characteristic Values power supplies (T = 25C, unless otherwise specified) J DC choppers min. typ. max. Pulse generators V V = 0 V, I = 1mA 600 V DSS GS D V V = V , I = 8mA 2.5 5.0 V Advantages GS(th) DS GS D Easy to mount I V = 30 V, V = 0 200 nA GSS GS DS Space savings I V = V T = 25C 50 A DSS DS DSS J High power density V = 0 V T = 125C3 mA GS J R V = 10 V, I = 0.5 I 80 m DS(on) GS D D25 Note 1 DS99029A(06/03) 2003 IXYS All rights reservedIXFN70N60Q2 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I Note 1 36 50 S fs DS D D25 C 7200 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 290 pF rss t 26 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 25 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External) 60 ns d(off) G Dim. Millimeter Inches t 12 ns Min. Max. Min. Max. f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 265 nC G(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 57 nC GS GS DS DSS D D25 E 4.09 4.29 0.161 0.169 Q 120 nC F 14.91 15.11 0.587 0.595 GD G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.14 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Source-Drain Diode Characteristic Values Q 26.54 26.90 1.045 1.059 (T = 25C, unless otherwise specified) J R 3.94 4.42 0.155 0.174 Symbol Test Conditions min. typ. max. S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I V = 0 V 70 A S GS I Repetitive 280 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = 25A F Q 1.2 C -di/dt = 100 A/s RM V = 100 V R I 8A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343