TM V I R HiPerFET DSS D25 DS(on) IXFK 73 N 30 300 V 73 A 45 m Power MOSFETs IXFN 73 N 30 300 V 73 A 45 m t 200 ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN V T = 25C to 150C 300 300 V DSS J V T = 25C to 150C R = 1 M 300 300 V (TAB) DGR J GS G D V Continuous 20 20 V S GS V Transient 30 30 V GSM miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN) miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN) E153432 E153432 E153432 I T = 25C 73 73 A E153432 E153432 D25 C S I T = 25C, pulse width limited by T 292 292 A DM C JM G I T = 25C 40 40 A AR C E T = 25C 30 30 mJ AR C S dv/dt I I , di/dt 100 A/ s, V V , 5 5 V/ns S DM DD DSS D T 150C, R = 2 W J G P T = 25C 500 520 W G = Gate D = Drain D C S = Source TAB = Drain T -55 ... +150 C J Either Source terminal at miniBLOC can be used T 150 C JM as Main or Kelvin Source T -55 ... +150 C stg Features International standard packages T 1.6 mm (0.063 in) from case for 10 s 300 - C L JEDEC TO-264 AA, epoxy meet V 50/60 Hz, RMS t = 1 min - 2500 V~ ISOL UL 94 V-0, flammability classification I 1 mA t = 1 s - 3000 V~ ISOL miniBLOC with Aluminium nitride isolation M Mounting torque 0.9/6 1.5/13 Nm/lb.in. d TM Low R HDMOS process Terminal connection torque - 1.5/13 Nm/lb.in. DS (on) Rugged polysilicon gate cell structure Weight 10 30 g Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (T = 25C, unless otherwise specified) J Synchronous rectification min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 1 mA 300 V DSS GS D power supplies V V = V , I = 8 mA 2 4 V GS(th) DS GS D DC choppers Temperature and lighting controls I V = 20 V , V = 0 200 nA GSS GS DC DS Low voltage relays I V = 0.8 V T = 25C 400 uA DSS DS DSS J V = 0 V T = 125C 2 mA Advantages GS J Easy to mount R V = 10 V, I = 0.5 I 45 m DS(on) GS D D25 Space savings Pulse test, t 300 s, duty cycle d 2 % High power density 2001 IXYS All rights reserved 92805J (11/01)IXFK 73N30 IXFN 73N30 TO-264 AA Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 50 S fs DS D D25 C 9000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1500 pF oss GS DS C 580 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 80 ns r GS DS DSS D D25 Dim. Millimeter Inches Min. Max. Min. Max. t R = 1 (External), 100 ns d(off) G A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 t 50 ns f A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 Q 360 nC b1 2.39 2.69 .094 .106 g(on) b2 2.90 3.09 .114 .122 Q V = 10 V, V = 0.5 V , I = 0.5 I 60 nC c 0.53 0.83 .021 .033 gs GS DS DSS D D25 D 25.91 26.16 1.020 1.030 Q 180 nC gd E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R TO-264 AA 0.25 K/W thJC K 0.00 0.25 .000 .010 R TO-264 AA 0.15 K/W L 20.32 20.83 .800 .820 thCK L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 R miniBLOC, SOT-227 B 0.24 K/W thJC Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R miniBLOC, SOT-227 B 0.05 K/W thCK R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Source-Drain Diode Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 73 A S GS I Repetitive pulse width limited by T 292 A SM JM V I = 100 A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 200 ns rr Q I = I , -di/dt = 100 A/ s, V = 100 V 2 C RM F S R I 40 A M4 screws (4x) supplied RM Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025