TM IXFN 80N50 V = 500 V HiPerFET DSS I = 80 A Power MOSFETs D25 R = 55 m DS(on) Single Die MOSFET D t 250 ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t G rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 V T = 25C to 150C 500 V DSS J S V T = 25C to 150C R = 1 M 500 V DGR J GS G V Continuous 20 V GS V Transient 30 V GSM S I T = 25C, Chip capability 80 A D25 C D I T = 25C, pulse width limited by T 320 A DM C JM I T = 25C80A AR C E T = 25C64mJ G = Gate D = Drain AR C S = Source E T = 25C6J AS C Either Source terminal of miniBLOC can be used dv/dt I I , di/dt 100 A/s, V V , 5 V/ns as Main or Kelvin Source S DM DD DSS T 150C, R = 2 J G Features P T = 25C 780 W D C International standard package T -55 ... +150 C J miniBLOC, with Aluminium nitride T 150 C JM isolation T -55 ... +150 C stg TM Low R HDMOS process DS (on) Rugged polysilicon gate cell structure V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I 1 mA t = 1 s 3000 V~ ISOL Unclamped Inductive Switching (UIS) rated M Mounting torque 1.5/13 Nm/lb.in. d Terminal connection torque 1.5/13 Nm/lb.in. Low package inductance Fast intrinsic Rectifier Weight 30 g Applications DC-DC converters Symbol Test Conditions Characteristic Values Battery chargers (T = 25C, unless otherwise specified) J Switched-mode and resonant-mode min. typ. max. power supplies V V = 0 V, I = 3 mA 500 V DC choppers DSS GS D V V = V , I = 8 mA 2.5 4.5 V Temperature and lighting controls GS(th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V T = 25C 100 A Advantages DSS DS DSS J V = 0 V T = 125C2mA GS J Easy to mount R V = 10 V, I = 0.5 I 55 m Space savings DS(on) GS D D25 Pulse test, t 300 s, High power density duty cycle d 2 % DS98538E(12/03) 2003 IXYS All rights reservedIXFN 80N50 Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 15 V I = 0.5 I , pulse test 50 70 S fs DS D D25 C 9890 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1750 pF oss GS DS C 460 pF rss t 61 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 70 ns r GS DS DSS D D25 M4 screws (4x) supplied t R = 1 (External), 102 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 27 ns f A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 Q 380 nC G(on) C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 80 nC GS GS DS DSS D D25 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 Q 173 nC GD G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 R 0.16 K/W thJC J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 R 0.05 K/W thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 80 A S GS I Repetitive 320 A SM pulse width limited by T JM V I = I , V = 0 V, 1.3 V SD F S GS Pulse test, t < 300 ms, duty cycle d < 2 % t I = 30A, -di/dt = 100 A/s, V = 100 V 250 ns rr F R Q 1.2 C RM I 8A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025