TM HiperFET V = 500V IXFN80N50Q2 DSS Power MOSFET I = 72A D25 Q2-Class R 65m DS(on) t 250ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 72 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 320 A S = Source DM C JM I T = 25 C 80 A A C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source E T = 25 C5J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 20 V/ns S DM DD DSS J P T = 25 C 890 W D C Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ Isolation ISOL Avanlache Rated M Mounting Torque for Base Plate 1.5/13 Nm/lb.in d Low Package Inductance Terminal Connection Torque 1.3/11.5 Nm/lb.in Fast Intrinsic Rectifier Weight 30 g Low R and Q DS(on) G Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D V V = V , I = 8mA 3.0 5.5 V DC-DC Converters GS(th) DS GS D Battery Chargers I V = 30V, V = 0V 200 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 100 A DSS DS DSS GS DC Choppers T = 125C 5 mA J Temperature and Lighting Controls R V = 10V, I = 40A, Note 1 65 m DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS99031C(02/14) IXFN80N50Q2 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 40A, Note 1 40 55 S fs DS D C 12.8 nF iss C V = 0V, V = 25V, f = 1MHz 1640 pF oss GS DS C 440 pF rss t 29 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 40A GS DS DSS D t 60 ns d(off) R = 1 (External) G t 11 ns (M4 screws (4x) supplied) f Q 250 nC g(on) Q V = 10V, V = 0.5 V , I = 40A 60 nC gs GS DS DSS D Q 120 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 25A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V, V = 0V R GS I 12.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537