Q3-Class V = 500V IXFN80N50Q3 DSS TM HiperFET I = 63A D25 Power MOSFET R 65m DS(on) t 250ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25 C 63 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 240 A S = Source DM C JM I T = 25 C 80 A A C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source E T = 25 C 5 J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J P T = 25 C 780 W D C Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ Isolation ISOL Low Package Inductance M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d Fast Intrinsic Rectifier Terminal Connection Torque 1.3/11.5 Nm/lb.in. Low R and Q DS(on) G Weight 30 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 500 V DSS GS D DC-DC Converters V V = V , I = 8mA 3.5 6.5 V Battery Chargers GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS Temperature and Lighting Controls T = 125 C 2 mA J R V = 10V, I = 40A, Note 1 65 m DS(on) GS D DS100303A(12/19) 2019 IXYS CORPORATION, All Rights Reserved IXFN80N50Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 40A, Note 1 35 55 S fs DS D C 10 nF iss C V = 0V, V = 25V, f = 1MHz 1260 pF oss GS DS C 115 pF rss R Gate Input Resistance 0.15 Gi t 30 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 40A GS DS DSS D t 43 ns d(off) R = 1 (External) G t 15 ns f Q 200 nC g(on) Q V = 10V, V = 0.5 V , I = 40A 77 nC gs GS DS DSS D Q 90 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 40A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V, V = 0V I R GS 15.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537