TM TM Polar HiPerFET V = 600V IXFN82N60P DSS Power MOSFET I = 72A D25 R 75m DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V DSS J V T = 25C to 150C, R = 1M 600 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 72 A D25 C G = Gate D = Drain S = Source I T = 25C, Pulse Width Limited by T 200 A DM C JM I T = 25C 82 A Either Source Terminal S can be used as A C the Source Terminal or the Kelvin Source E T = 25C5J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 1040 W D C Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C z stg International Standard Package z miniBLOC, with Aluminium Nitride T 1.6mm (0.062 in.) from Case for 10s 300 C L Isolation T Plastic Body for 10s 260 C SOLD z Dynamic dv/dt Rating V 50/60 Hz, RMS, t = 1minute 2500 V~ z ISOL Avalanche Rated z I 1mA, t = 1s 3000 V~ Fast Intrinsic Rectifier ISOL z Low R M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. DS(on) d z Terminal Connection Torque 1.3/11.5 Nm/lb.in. Low Drain-to-Tab Capacitance z Low Package Inductance Weight 30 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 600 V DSS GS D z V V = V , I = 8mA 3.0 5.0 V DC-DC Converters GS(th) DS GS D z Battery Chargers I V = 30V, V = 0V 200 nA GSS GS DS z Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS z Uninterrupted Power Supplies T = 125C 1 mA J z AC Motor Drives R V = 10V, I = 41A, Note 1 75 m DS(on) GS D z High Speed Power Switching Applications 2012 IXYS CORPORATION, All Rights Reserved DS99559F(07/12) IXFN82N60P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 41A, Note 1 50 80 S fs DS D C 23 nF iss C V = 0V, V = 25V, f = 1MHz 1490 pF oss GS DS C 200 pF rss t 28 ns d(on) Resistive Switching Times t 23 ns r V = 10V, V = 0.5 V , I = 41A GS DS DSS D t 79 ns d(off) R = 1 (External) G t 24 ns (M4 screws (4x) supplied) f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 41A 96 nC gs GS DS DSS D Q 67 nC gd R 0.12 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 82 A S GS I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 200 ns I = 25A, -di/dt = 100A/s rr F Q 0.6 C RM V = 100V, V = 0V R GS I 6.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537